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Effect of substrate bias on deposition behaviour of charged silicon nanoparticles in ICP-CVD process

Yoo, Seung-Wan and You, Shin-Jae and Kim, Jung-Hyung and Seong, Dae-Jin and Seo, Byong-Hoon and Hwang, Nong-Moon (2017) Effect of substrate bias on deposition behaviour of charged silicon nanoparticles in ICP-CVD process. Journal of Physics D: Applied Physics, 50 (3). Art. No. 035201. ISSN 0022-3727. doi:10.1088/1361-6463/50/3/035201.

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The effect of a substrate bias on the deposition behaviour of crystalline silicon films during inductively coupled plasma chemical vapour deposition (ICP-CVD) was analysed by consideration of non-classical crystallization, in which the building block is a nanoparticle rather than an individual atom or molecule. The coexistence of positively and negatively charged nanoparticles in the plasma and their role in Si film deposition are confirmed by applying bias voltages to the substrate, which is sufficiently small as not to affect the plasma potential. The sizes of positively and negatively charged nanoparticles captured on a carbon membrane and imaged using TEM are, respectively, 2.7–5.5 nm and 6–13 nm. The film deposited by positively charged nanoparticles has a typical columnar structure. In contrast, the film deposited by negatively charged nanoparticles has a structure like a powdery compact with the deposition rate about three times higher than that for positively charged nanoparticles. All the films exhibit crystallinity even though the substrate is at room temperature, which is attributed to the deposition of crystalline nanoparticles formed in the plasma. The film deposited by negatively charged nanoparticles has the highest crystalline fraction of 0.84.

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Additional Information:© 2016 IOP Publishing Ltd. Received 18 May 2016, revised 2 October 2016; Accepted for publication 19 October 2016; Published 7 December 2016. This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning, Korea (NRF-2014M3C1A8048815) and the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (MSIP) (NO. NRF-2015R1A5A1037627).
Funding AgencyGrant Number
National Research Foundation of KoreaNRF-2014M3C1A8048815
National Research Foundation of KoreaNRF-2015R1A5A1037627
Subject Keywords:Si thin film, charged nanoparticles, ICP-CVD, substrate bias, non-classical crystallization
Issue or Number:3
Record Number:CaltechAUTHORS:20170120-090809848
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Official Citation:Seung-Wan Yoo et al 2017 J. Phys. D: Appl. Phys. 50 035201
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:73565
Deposited By: Tony Diaz
Deposited On:22 Jan 2017 17:03
Last Modified:11 Nov 2021 05:18

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