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High-speed front-illuminated GaInAsP/InP pin photodiode

Yi, M. B. and Paslaski, J. and Liu, Y. Y. and Chen, T. R. and Yariv, A. (1988) High-speed front-illuminated GaInAsP/InP pin photodiode. Electronics Letters, 24 (8). pp. 455-456. ISSN 0013-5194.

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Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved.

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Additional Information:©1988 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.
Issue or Number:8
Record Number:CaltechAUTHORS:YIMel88
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:736
Deposited By: Archive Administrator
Deposited On:21 Sep 2005
Last Modified:02 Oct 2019 22:36

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