Yi, M. B. and Paslaski, J. and Liu, Y. Y. and Chen, T. R. and Yariv, A. (1988) High-speed front-illuminated GaInAsP/InP pin photodiode. Electronics Letters, 24 (8). pp. 455-456. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:YIMel88
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Abstract
Describes a high-speed front-illuminated GaInAsP/InP pin photodiode for use at the optical wavelength of 1.3 μm. The device is grown on an n+-InP substrate and uses polyimide both as a passivation layer and as a bonding pad holder to reduce parasitic capacitance. An optoelectronic sampling measurement of the impulse response shows a pulsewidth (FWHM) of 28 ps. A 3 dB bandwidth in excess of 18 GHz has been achieved.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1988 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. |
| Issue or Number: | 8 |
| Record Number: | CaltechAUTHORS:YIMel88 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:YIMel88 |
| Alternative URL: | http://ieeexplore.ieee.org/iel1/2220/431/00008229.pdf |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 736 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 21 Sep 2005 |
| Last Modified: | 26 Dec 2012 08:41 |
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