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Measurement of some transistor parameters

Barna, Arpad (1961) Measurement of some transistor parameters. Synchrotron Laboratory, CTSL-23. California Institute of Technology , Pasadena, CA. (Unpublished)

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Design of transistor circuits, particularly those operating in the nanosecond time range necessitated the measurement of some transistor parameters usually not specified by the manufacturers. Collector to base capacitance, gain-bandwidth product, beta and base spreading resistance of the transistors of Table 1 were measured.

Item Type:Report or Paper (Technical Report)
Additional Information:© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68.
Group:Synchrotron Laboratory
Funding AgencyGrant Number
U.S. Atomic Energy CommissionAT(11-1)-68
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Other Numbering System NameOther Numbering System ID
Series Name:Synchrotron Laboratory
Issue or Number:CTSL-23
Record Number:CaltechAUTHORS:20170123-071425828
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:73605
Deposited By: Ruth Sustaita
Deposited On:23 Jan 2017 16:53
Last Modified:03 Oct 2019 16:29

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