Barna, Arpad (1961) Measurement of some transistor parameters. Synchrotron Laboratory, CTSL-23. California Institute of Technology , Pasadena, CA. (Unpublished) https://resolver.caltech.edu/CaltechAUTHORS:20170123-071425828
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Abstract
Design of transistor circuits, particularly those operating in the nanosecond time range necessitated the measurement of some transistor parameters usually not specified by the manufacturers. Collector to base capacitance, gain-bandwidth product, beta and base spreading resistance of the transistors of Table 1 were measured.
| Item Type: | Report or Paper (Technical Report) | ||||
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| Additional Information: | © 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68. | ||||
| Group: | Synchrotron Laboratory | ||||
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| Series Name: | Synchrotron Laboratory | ||||
| Issue or Number: | CTSL-23 | ||||
| DOI: | 10.7907/Z93R0QVM | ||||
| Record Number: | CaltechAUTHORS:20170123-071425828 | ||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170123-071425828 | ||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||
| ID Code: | 73605 | ||||
| Collection: | CaltechAUTHORS | ||||
| Deposited By: | Ruth Sustaita | ||||
| Deposited On: | 23 Jan 2017 16:53 | ||||
| Last Modified: | 03 Oct 2019 16:29 |
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