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High-Resolution X-ray Photoelectron Spectroscopy of Chlorine-Terminated GaAs(111)A Surfaces

Traub, Matthew C. and Biteen, Julie S. and Michalak, David J. and Webb, Lauren J. and Brunschwig, Bruce S. and Lewis, Nathan S. (2006) High-Resolution X-ray Photoelectron Spectroscopy of Chlorine-Terminated GaAs(111)A Surfaces. Journal of Physical Chemistry B, 110 (32). pp. 15641-15644. ISSN 1520-6106. doi:10.1021/jp061623n.

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Oxide-terminated and Cl-terminated GaAs(111)A surfaces have been characterized in the As and Ga 3d regions by high-resolution, soft X-ray photoelectron spectroscopy. The Cl-terminated surface, formed by treatment with 6 M HCl(aq), showed no detectable As oxides or As^0 in the As 3d region. The Ga 3d spectrum of the Cl-terminated surface showed a broad, intense signal at 19.4 eV and a smaller signal at 21.7 eV. The Ga 3d peaks were fitted using three species, one representing bulk GaAs and the others representing two chemical species on the surface. The large peak was well-fitted by the bulk GaAs emission and by a second doublet, assigned to surface Ga atoms bonded to Cl, that was shifted by 0.34 eV from the bulk GaAs 3d emission. The smaller peak, shifted by 2.3 eV in binding energy relative to the bulk GaAs Ga 3d signal, is assigned to Ga(OH)_3. The data confirm that wet chemical etching allows for the formation of well-defined, Cl-terminated GaAs(111)A surfaces free of detectable elemental As, that can provide a starting point for further functionalization of GaAs.

Item Type:Article
Related URLs:
URLURL TypeDescription
Biteen, Julie S.0000-0003-2038-6484
Michalak, David J.0000-0002-1226-608X
Webb, Lauren J.0000-0001-9999-5500
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2006 American Chemical Society. Received: March 15, 2006; In Final Form: May 10, 2006. Publication Date (Web): July 22, 2006. We acknowledge the Department of Energy, Office of Basic Energy Sciences, and the Beckman Institute for support of this work. The research was carried out in part at the National Synchrotron Light Source, Brookhaven National Laboratory, which is supported by the U. S. Department of Energy, Division of Materials Sciences and Division of Chemical Sciences, under contract no. DE-AC02-98CH10886. We thank Michael Sullivan for use of the N_2(g)-purged glovebox at the NSLS.
Funding AgencyGrant Number
Department of Energy (DOE)DE-AC02-98CH10886
Caltech Beckman InstituteUNSPECIFIED
Issue or Number:32
Record Number:CaltechAUTHORS:20170315-160649038
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Official Citation:High-Resolution X-ray Photoelectron Spectroscopy of Chlorine-Terminated GaAs(111)A Surfaces Matthew C. Traub, Julie S. Biteen, David J. Michalak, Lauren J. Webb, Bruce S. Brunschwig, and Nathan S. Lewis The Journal of Physical Chemistry B 2006 110 (32), 15641-15644 DOI: 10.1021/jp061623n
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:75164
Deposited By: Tony Diaz
Deposited On:16 Mar 2017 16:37
Last Modified:15 Nov 2021 16:31

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