Very low threshold AlGaAs/GaAs lasers grown on tilted (100) GaAs Substrates by Molecular Beam Epitaxy

Chen, H. Z. and Morkoç, H. and Yariv, A. (1987) Very low threshold AlGaAs/GaAs lasers grown on tilted (100) GaAs Substrates by Molecular Beam Epitaxy. In: 1987 International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 887-888. https://resolver.caltech.edu/CaltechAUTHORS:20170327-152936842

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Abstract

The threshold current density of semiconductor lasers has seen a rapid and considerable reduction in recent years. The progress however, appeared to slow down giving rise to speculations that perhaps the fundamental limits were being approached. It is always however, very delicate to separate bottlenecks associated with the technology from the fundamental properties particularly during the development phase. In this paper, we show that threshold current densities as low as 80 A/cm^2 can be obtained in optimized graded refractive index AlGaAs/GaAs lasers with quantum well thicknesses of about 100 Å.

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Book Section

Related URLs:

URL	URL Type	Description
http://dx.doi.org/10.1109/IEDM.1987.191583	DOI	Article
http://ieeexplore.ieee.org/document/1487541/	Publisher	Article

Alternate Title:

Very low threshold AlGaAs/GaAs lasers grown on tilted

Additional Information:

© 1987 IEEE. This work is supported by the Office of Naval Research, the Air Force Office of Scientific Research and the National Science Foundation. the authors would like to thank A. Ghaffari for the technical assistance. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.

Funders:

Funding Agency	Grant Number
Office of Naval Research (ONR)	UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)	UNSPECIFIED
NSF	UNSPECIFIED
Strategic Defense Initiative Organization (SDIO)	UNSPECIFIED

DOI:

10.1109/IEDM.1987.191583

Record Number:

CaltechAUTHORS:20170327-152936842

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:20170327-152936842

Official Citation:

H. Z. Chen, H. Morkoc and A. Yariv, "Very low threshold AlGaAs/GaAs lasers grown on tilted," 1987 International Electron Devices Meeting, 1987, pp. 887-888. doi: 10.1109/IEDM.1987.191583

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75442

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27 Mar 2017 23:23

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15 Nov 2021 16:33

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