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Very low threshold AlGaAs/GaAs lasers grown on tilted (100) GaAs Substrates by Molecular Beam Epitaxy

Chen, H. Z. and Morkoç, H. and Yariv, A. (1987) Very low threshold AlGaAs/GaAs lasers grown on tilted (100) GaAs Substrates by Molecular Beam Epitaxy. In: 1987 International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 887-888. https://resolver.caltech.edu/CaltechAUTHORS:20170327-152936842

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Abstract

The threshold current density of semiconductor lasers has seen a rapid and considerable reduction in recent years. The progress however, appeared to slow down giving rise to speculations that perhaps the fundamental limits were being approached. It is always however, very delicate to separate bottlenecks associated with the technology from the fundamental properties particularly during the development phase. In this paper, we show that threshold current densities as low as 80 A/cm^2 can be obtained in optimized graded refractive index AlGaAs/GaAs lasers with quantum well thicknesses of about 100 Å.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/IEDM.1987.191583DOIArticle
http://ieeexplore.ieee.org/document/1487541/PublisherArticle
Alternate Title:Very low threshold AlGaAs/GaAs lasers grown on tilted
Additional Information:© 1987 IEEE. This work is supported by the Office of Naval Research, the Air Force Office of Scientific Research and the National Science Foundation. the authors would like to thank A. Ghaffari for the technical assistance. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
NSFUNSPECIFIED
Strategic Defense Initiative Organization (SDIO)UNSPECIFIED
Record Number:CaltechAUTHORS:20170327-152936842
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170327-152936842
Official Citation:H. Z. Chen, H. Morkoc and A. Yariv, "Very low threshold AlGaAs/GaAs lasers grown on tilted," 1987 International Electron Devices Meeting, 1987, pp. 887-888. doi: 10.1109/IEDM.1987.191583
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:75442
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:27 Mar 2017 23:23
Last Modified:03 Oct 2019 16:50

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