Mandegaran, Sam and Hajimiri, Ali (2007) A Breakdown Voltage Multiplier for High Voltage Swing Drivers. IEEE Journal of Solid-State Circuits, 42 (2). pp. 302-312. ISSN 0018-9200. doi:10.1109/JSSC.2006.889390. https://resolver.caltech.edu/CaltechAUTHORS:MANieeejssc07
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Abstract
A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Ω load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector–emitter breakdown voltage without stressing any single transistor.
| Item Type: | Article | ||||||
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| Additional Information: | © Copyright 2007 IEEE. Reprinted with permission. Manuscript received January 19, 2005; revised August 8, 2006. [Posted online: 2007-01-29] The authors would like to acknowledge IBM Corporation for chip fabrication. They would also like to thank B. Analui, J. Buckwalter, H. Hashemi, A. Komijani, and A. Natarajan for valuable technical discussion. | ||||||
| Subject Keywords: | Breakdown voltage (BV), breakdown voltage doubler, BV-Doubler, breakdown voltage multiplier, BV-multiplier, driver, optical modulator driver, SiGe. | ||||||
| Issue or Number: | 2 | ||||||
| DOI: | 10.1109/JSSC.2006.889390 | ||||||
| Record Number: | CaltechAUTHORS:MANieeejssc07 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:MANieeejssc07 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 7548 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 02 Mar 2007 | ||||||
| Last Modified: | 08 Nov 2021 20:43 |
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