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Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures

Young, D. K. and Reynolds, C. L. and Swaminathan, V. and Walters, F. S. (2005) Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures. Electronics Letters, 41 (18). pp. 1008-1010. ISSN 0013-5194. doi:10.1049/el:20052347. https://resolver.caltech.edu/CaltechAUTHORS:20170408-142157418

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Abstract

It is known that the Zn doping profile in strained multi-quantum-well (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles is described. When the pn junction lies within the active region, the excitation dependence of the PL intensity is superlinear at low excitation and linear at higher excitation. As the Zn profile is set back from the heterointerface creating a displaced pn junction from the active region, the excitation dependence is superlinear and linear at 300 K but becomes linear for all excitation powers at 77 K. The implications of these observations are discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/el:20052347DOIArticle
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1507065&isnumber=32293PublisherArticle
http://digital-library.theiet.org/content/journals/10.1049/el_20052347PublisherArticle
Additional Information:© 2005 IEE. 28 June 2005.
Issue or Number:18
DOI:10.1049/el:20052347
Record Number:CaltechAUTHORS:20170408-142157418
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170408-142157418
Official Citation:D. K. Young, C. L. Reynolds, V. Swaminathan and F. S. Walters, "Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures," in Electronics Letters, vol. 41, no. 18, pp. 1008-1010, 1 Sept. 2005. doi: 10.1049/el:20052347
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:75930
Collection:CaltechAUTHORS
Deposited By: 1Science Import
Deposited On:20 Apr 2017 22:40
Last Modified:15 Nov 2021 16:56

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