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Electronic mechanism of critical temperature variation in RBa_2Cu_3O_(7− δ)

Chen, Xiao-Jia and Su, Haibin (2005) Electronic mechanism of critical temperature variation in RBa_2Cu_3O_(7− δ). Physical Review B, 71 (9). Art. No. 094512. ISSN 1098-0121. doi:10.1103/PhysRevB.71.094512.

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We have performed systematic studies of the trend of the critical temperature T_c due to both Madelung site potential difference between in-plane oxygen and copper sites ΔV_M and interlayer effect in the optimally doped 123 superconductors RBa_2Cu_3O_(7−δ). ΔV_M is found to decrease with the increase of the trivalent rare-earth ionic radius r_(R^(3^+)). This change enhances the next-nearest-neighbor hopping integral t′, which results in the experimentally observed increase of T_c with r_(R^(3^+)). The coherent interlayer single-particle hopping t_⊥ has a more profound effect than t′ on the nearly linear trend of T_c as a function of r_(R^(3^+)). These results reveal the importance of the electronic origin of the rare-earth ionic size effect on T_c in this family.

Item Type:Article
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Su, Haibin0000-0001-9760-6567
Additional Information:© 2005 American Physical Society. (Received 10 August 2004; revised manuscript received 23 November 2004; published 23 March 2005) H.B.S. is grateful for the guidance from Professor Phil Allen and Dr. David Welch at the early stage of this work. This work at Carnegie was supported by the U.S. Department of Energy Grant No. DEFG02-02ER4595.
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-02ER4595
Issue or Number:9
Classification Code:PACS number s s d : 74.25.Jb, 74.62.Bf, 74.72.Bk
Record Number:CaltechAUTHORS:20170408-150920301
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:76031
Deposited By: 1Science Import
Deposited On:16 May 2017 22:19
Last Modified:15 Nov 2021 16:57

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