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Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Abidi, Irfan H. and Liu, Yuanyue and Pan, Jie and Tyagi, Abhishek and Zhuang, Minghao and Zhang, Qicheng and Cagang, Aldrine A. and Weng, Lu-Tao and Sheng, Ping and Goddard, William A., III and Luo, Zhengtang (2017) Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Advanced Functional Materials, 27 (23). Art. No. 1700121. ISSN 1616-301X. doi:10.1002/adfm.201700121.

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A unique strategy is reported to constrain the nucleation centers for multilayer graphene (MLG) and, later, single-crystal graphene domains by gettering carbon source on backside of the flat Cu foil, during chemical vapor deposition. Hitherto, for a flat Cu foil, the top-surface-based growth mechanism is emphasized, while overlooking the graphene on the backside. However, the systematic experimental findings indicate a strong correlation between the backside graphene and the nucleation centers on the top-surface, governed by the carbon diffusion through the bulk Cu. This understanding steers to devise a strategy to mitigate the carbon diffusion to the top-surface by using a carbon “getter” substrate, such as nickel, on the backside of the Cu foil. Depth profiling of the nickel substrate, along with the density functional theory calculations, verifies the gettering role of the nickel support. The implementation of the backside carbon gettering approach on single-crystal graphene growth results in lowering the nucleation density by two orders of magnitude. This enables the single-crystal domains to grow by 6 mm laterally on the untreated Cu foil. Finally, the growth of large-area polycrystalline single layer graphene, free of unwanted MLG domains, with significantly improved field-effect mobility of ≈6800 cm^2 V^(−1) s^(−1) is demonstrated.

Item Type:Article
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URLURL TypeDescription
Liu, Yuanyue0000-0002-5880-8649
Zhang, Qicheng0000-0002-6702-191X
Goddard, William A., III0000-0003-0097-5716
Additional Information:© 2017 Wiley-VCH Verlag GmbH & Co. Version of Record online: 11 Apr 2017. Manuscript Revised: 13 Feb 2017. Manuscript Received: 9 Jan 2017. This project was supported by the Research Grant Council of Hong Kong SAR (Project number 16204815). The authors appreciate the support from the Center for 1D/2D Quantum Materials and the Innovation and Technology Commission (ITC-CNERC14SC01). I.H.A. appreciates financial support from the Higher Education Commission (HEC) of Pakistan. Technical assistance from the Materials Characterization and Preparation Facilities is greatly appreciated. Y.L. thanks the support from the Resnick Prize Postdoctoral Fellowship at the Caltech. W.A.G. III thanks the NSF (DMREF-1436985) and the DOE (DE-SC0014607) for support. This work used computational resources provided by the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. DOE under Contract DE-AC02-05CH11231, the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by the NSF Grant ACI-1053575, and of the National Renewable Energy Laboratory supported by the DoE office of Energy Efficiency and Renewable Energy.
Group:Resnick Sustainability Institute
Funding AgencyGrant Number
Research Grants Council of Hong Kong16204815
Innovation and Technology Commission (Hong Kong)ITC-CNERC14SC01
Higher Education Commission (Pakistan)UNSPECIFIED
Resnick Sustainability InstituteUNSPECIFIED
Department of Energy (DOE)DE-SC0014607
Department of Energy (DOE)DE-AC02-05CH11231
Subject Keywords:carbon gettering, CVD graphene, multilayers, nucleation, single crystals
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Other Numbering System NameOther Numbering System ID
Issue or Number:23
Record Number:CaltechAUTHORS:20170412-093637154
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Official Citation:I. H. Abidi, Y. Liu, J. Pan, A. Tyagi, M. Zhuang, Q. Zhang, A. A. Cagang, L.-T. Weng, P. Sheng, W. A. Goddard III, Z. Luo, Adv. Funct. Mater. 2017, 27, 1700121.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:76533
Deposited By: Ruth Sustaita
Deposited On:12 Apr 2017 18:12
Last Modified:15 Nov 2021 17:00

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