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Gating the Conductivity of Arrays of Metallic Quantum Dots

Remacle, F. and Beverly, K. C. and Heath, J. R. and Levine, R. D. (2003) Gating the Conductivity of Arrays of Metallic Quantum Dots. Journal of Physical Chemistry B, 107 (50). pp. 13892-13901. ISSN 1520-6106. https://resolver.caltech.edu/CaltechAUTHORS:20170426-103832302

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Abstract

Experimental and computational studies demonstrating that the conduction of compressed, two-dimensional arrays of hexagonally ordered Ag quantum dots (QDs) may be varied through the influence of applied electric fields are reported and discussed. Monolayers of Ag QDs are incorporated into three-terminal (gated) devices, in which temperature, source-drain voltage (V_(sd)), gating voltage (V_g), compression of the array, and QD size distribution may all be varied. Experimental and computational results are compared in an effort to construct a physical picture of the system. Current vs V_(sd) plots at low temperatures exhibit systematic nonlinearities that change over to an ohmic-like behavior at higher temperatures and/or higher V_(sd). The voltage-induced transition is discussed as a transition of the conducting states from domain localized to delocalized. Such a transition was previously observed in the temperature dependence of the resistance. The computational model reveals that this transition is also highly sensitive to both the compression of the array and the size-distribution of the dots. We calculate the influence of V_g on the conductivity of the QD array, using the same computational model. In both the experiment and the model, we find a significant voltage gating effect and we observe hole-type conductivity of the array. Overall, the results demonstrate that low-temperature transport measurements provide a spectroscopic-like probe of the electronic states of the QD lattice. The theoretical approach further suggests that quite different gating behavior can be observed for electrodes with a different Fermi energy than the gold electrodes used in the experiment.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp036357hDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp036357hPublisherArticle
ORCID:
AuthorORCID
Heath, J. R.0000-0001-5356-4385
Additional Information:© 2003 American Chemical Society. Received: August 8, 2003; In Final Form: October 1, 2003. Publication Date (Web): November 18, 2003. The experimental work was supported by the U.S. Department of Energy and a University of California administered CULAR grant. The computational work used facilities provided by NIC (University of Liège) and SFB 377 (Hebrew University of Jerusalem). The work of F.R. is supported by RW.115012 (Région Wallonne) and FRFC 2.4562.03 (FNRS, Belgium). The final stages of this work were supported by the United States−Israel BiNational Science Foundation.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
University of CaliforniaUNSPECIFIED
Région WallonneRW.115012
Fonds de la Recherche Scientifique (FNRS)FRFC 2.4562.03
Binational Science Foundation (USA-Israel)UNSPECIFIED
Issue or Number:50
Record Number:CaltechAUTHORS:20170426-103832302
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170426-103832302
Official Citation:Gating the Conductivity of Arrays of Metallic Quantum Dots F. Remacle, K. C. Beverly, J. R. Heath, and R. D. Levine The Journal of Physical Chemistry B 2003 107 (50), 13892-13901 DOI: 10.1021/jp036357h
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:76946
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Apr 2017 17:57
Last Modified:03 Oct 2019 17:51

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