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Germanium nanowires: from synthesis, surface chemistry, assembly to devices

Wang, Dunwei (2006) Germanium nanowires: from synthesis, surface chemistry, assembly to devices. In: 64th Device Research Conference. IEEE , Piscataway, NJ, pp. 244-248. ISBN 0-7803-9748-7.

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In order to continue the ever impressive and successful scaling pace of MOSFETs, tremendous research efforts have been spent to seek new materials to complement or replace Si as the Si-based ones are predicted to reach theoretical limits soon. Ge has low band gaps and high carrier mobilities, thus offering appealing potentials as a candidate of choice for future electronics. For the same purpose of discovering new materials, another area of interest is low dimensional nanostructures such as nanowires (NWs), owing to the facile synthesis, high structure perfection and superior properties. In this context, Ge NW has combined advantages and is particularly promising. I focus on this subject and have advanced in a wide range, from understanding and controlling synthesis and surface chemistry, to highly ordered assembly and devices with excellent performance.

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Additional Information:© 2006 IEEE.
Record Number:CaltechAUTHORS:20170501-160107491
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Official Citation:D. Wang, "Germanium nanowires: from synthesis, surface chemistry, assembly to devices," 2006 64th Device Research Conference, State College, PA, USA, 2006, pp. 244-248. doi: 10.1109/DRC.2006.305077
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77112
Deposited On:01 May 2017 23:56
Last Modified:15 Nov 2021 17:28

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