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Optical and Electronic Properties of Two-Dimensional Layered Materials

Bernardi, Marco and Ataca, Can and Palummo, Maurizia and Grossman, Jeffrey C. (2017) Optical and Electronic Properties of Two-Dimensional Layered Materials. Nanophotonics, 6 (2). pp. 479-493. ISSN 2192-8606. doi:10.1515/nanoph-2015-0030.

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Modern semiconductor devices have revolutionized wide-ranging technologies such as electronics, lighting, solar energy, and communication [1]. The semiconductor industry employs Si to fabricate electronic circuits, and GaAs, GaN, and other III–V materials for optoelectronics [2], with typical substrates consisting of wafers manufactured at high temperature. Precisely controlled thin films can be deposited on the substrate to achieve additional functionality, for example by chemical vapor deposition (CVD) or molecular beam epitaxy [3].

Item Type:Article
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URLURL TypeDescription
Bernardi, Marco0000-0001-7289-9666
Palummo, Maurizia0000-0002-3097-8523
Grossman, Jeffrey C.0000-0003-1281-2359
Additional Information:© 2017 M. Bernardi et al., published by De Gruyter Open. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License. Received May 9, 2015; accepted December 1, 2015. M.B. acknowledges support by a start-up fund from the California Institute of Technology. M.P. acknowledges E.C. for the RISE Project CoExAN GA644076. J.C.G. and C.A. are grateful to the Eni Solar Frontiers Center for financial support.
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European Research Council (ERC)CoExAN GA644076
Eni Solar Frontiers CenterUNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20170505-080500572
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77203
Deposited By: Tony Diaz
Deposited On:05 May 2017 16:32
Last Modified:15 Nov 2021 17:28

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