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Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates

Liu, Huiqiang and Chen, Zuxin and Chu, Sheng and Chen, Xuechen and Liu, Min and Peng, Nan and Chu, Guang and Huang, Feng and Peng, Rufang (2017) Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates. Advanced Optical Materials, 5 (11). Art. No. 1700178. ISSN 2195-1071.

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The creation of high efficiency and room temperature terahertz (THz) emitters has long been expected in both scientific and industrial communities. Despite the recent progress in THz source such as quantum cascade lasers, high efficiency THz emitters capable of operating at room temperature are still elusive. Indium nitride (InN), a narrow bandgap semiconductor, has emerged as a promising THz emitter due to its unique electronic properties. However, the efficiency of InN THz emitters reported up to now is still far from theoretically predicted because of inadequately engineered electrical conduction and radiative coupling. In this study, the authors report a novel, high performance THz emitting structure consisting of nanoengineered InN micro/nanopyramid arrays on a single crystal zinc oxide (ZnO) substrate. With improved electronic conduction from Zn diffusion induced doping and enhanced radiation coupling benefiting from uniquely structured geometry, the InN nanopyramids yielded THz emission intensity is close to an order of magnitude stronger than that of p-type indium arsenide (InAs). These findings prove that InN is a promising THz material and of wide importance in material science, optical engineering sectors, etc.

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Additional Information:© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue online: 5 June 2017; Version of record online: 9 May 2017; Manuscript Received: 24 February 2017. H.L. and Z.C. contributed equally to this work. The authors would like to thank Dr. Y. Chen for assistance in TEM imaging. The work on the InN nanopyramid growth and THz emission is supported by National Science Foundation of China (Grant No. 11204097 and U1530120). The authors declare no conflict of interest.
Funding AgencyGrant Number
National Natural Science Foundation of China11204097
National Natural Science Foundation of ChinaU1530120
Subject Keywords:InN; nanopyramids; terahertz emission; ZnO
Issue or Number:11
Record Number:CaltechAUTHORS:20170509-075008247
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Official Citation:H. Liu, Z. Chen, S. Chu, X. Chen, M. Liu, N. Peng, G. Chu, F. Huang, R. Peng, Advanced Optical Materials 2017, 5, 1700178
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77283
Deposited By: Tony Diaz
Deposited On:09 May 2017 16:41
Last Modified:03 Oct 2019 17:55

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