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Current Density versus Potential Characteristics of Dye-Sensitized Nanostructured Semiconductor Photoelectrodes. 1. Analytical Expressions

Lee, Jae-Joon and Coia, George M. and Lewis, Nathan S. (2004) Current Density versus Potential Characteristics of Dye-Sensitized Nanostructured Semiconductor Photoelectrodes. 1. Analytical Expressions. Journal of Physical Chemistry B, 108 (17). pp. 5269-5281. ISSN 1520-6106. doi:10.1021/jp035194u. https://resolver.caltech.edu/CaltechAUTHORS:20170510-095259794

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Abstract

A closed-form analytical model is developed to describe the steady-state current density−potential (J−E) characteristics of dye-sensitized nanostructured semiconductor photoelectrodes. The basic components of the model are a set of differential equations that describe the generation, recombination, and transport of charge carriers in mesoporous semiconductor electrode systems. Charge-carrier transport is treated as a diffusion process, and semiclassical Marcus theory is used to describe the kinetics at the interfaces between the semiconductor and the contacting phase as well as the kinetics at the interfaces with adsorbed dye. The model relates explicitly, within a single formalism, the rate constants for charge transfer of the mesoporous membrane electrode system to conventional intramolecular and intermolecular electron-transfer rate constant expressions and to interfacial electron-transfer processes at planar metal or semiconductor electrodes. The near-equilibrium situation is considered by including the reverse electron-transfer pathways for each rate process of interest. The underlying physical and chemical factors that form the basis of the model are completely parameterized to facilitate input into a numerical simulation algorithm, thereby allowing facile generation of simulated J−E curves for a wide range of experimental conditions.


Item Type:Article
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URLURL TypeDescription
http://dx.doi.org/10.1021/jp035194uDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp035194uPublisherArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2004 American Chemical Society. Received: May 2, 2003; In Final Form: September 25, 2003. Publication Date (Web): April 8, 2004. The authors gratefully acknowledge the Department of Energy, Office of Basic Energy Sciences, for support of this work.
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Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
Issue or Number:17
DOI:10.1021/jp035194u
Record Number:CaltechAUTHORS:20170510-095259794
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170510-095259794
Official Citation:Current Density versus Potential Characteristics of Dye-Sensitized Nanostructured Semiconductor Photoelectrodes. 1. Analytical Expressions Jae-Joon Lee, George M. Coia, and Nathan S. Lewis The Journal of Physical Chemistry B 2004 108 (17), 5269-5281 DOI: 10.1021/jp035194u
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77337
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:16 May 2017 20:36
Last Modified:15 Nov 2021 17:30

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