Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires

Haick, Hossam and Hurley, Patrick T. and Hochbaum, Allon I. and Yang, Peidong and Lewis, Nathan S. (2006) Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires. Journal of the American Chemical Society, 128 (28). pp. 8990-8991. ISSN 0002-7863. doi:10.1021/ja056785w. https://resolver.caltech.edu/CaltechAUTHORS:20170512-144735960

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Abstract

Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

Item Type:

Article

Related URLs:

URL	URL Type	Description
http://dx.doi.org/10.1021/ja056785w	DOI	Article
http://pubs.acs.org/doi/abs/10.1021/ja056785w	Publisher	Article
http://pubs.acs.org/doi/suppl/10.1021/ja056785w	Publisher	Supporting Information

ORCID:

Author	ORCID
Yang, Peidong	0000-0003-4799-1684
Lewis, Nathan S.	0000-0001-5245-0538

Additional Information:

© 2006 American Chemical Society. Received 4 October 2005. Published online 27 June 2006. Published in print 1 July 2006. We acknowledge the NSF, Grant CHE-0213589, for support of this work (N.S.L.), and DARPA-MARCO (P.Y.). H.H. thanks the Fulbright foundation for his postdoctoral fellowship, and A.H. thanks NSF for an IGERT fellowship.

Funders:

Funding Agency	Grant Number
NSF	CHE-0213589
Defense Advanced Research Projects Agency (DARPA)	UNSPECIFIED
Fulbright Foundation	UNSPECIFIED
NSF Graduate Research Fellowship	UNSPECIFIED
Microelectronics Advanced Research Corporation (MARCO)	UNSPECIFIED

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DOI:

10.1021/ja056785w

Record Number:

CaltechAUTHORS:20170512-144735960

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:20170512-144735960

Official Citation:

Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, and Nathan S. Lewis Journal of the American Chemical Society 2006 128 (28), 8990-8991 DOI: 10.1021/ja056785w

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ID Code:

77429

Collection:

CaltechAUTHORS

Deposited By:

Ruth Sustaita

Deposited On:

12 May 2017 23:41

Last Modified:

15 Nov 2021 17:31

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