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Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature

He, Rongrui and Feng, X. L. and Roukes, M. L. and Yang, Peidong (2008) Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature. Nano Letters, 8 (6). pp. 1756-1761. ISSN 1530-6984. https://resolver.caltech.edu/CaltechAUTHORS:20170512-154706804

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Abstract

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (∼90 nm down to ∼30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices’ resonant motions at frequencies as high as ∼100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/nl801071wDOIArticle
http://pubs.acs.org/doi/abs/10.1021/nl801071wPublisherArticle
ORCID:
AuthorORCID
Roukes, M. L.0000-0002-2916-6026
Yang, Peidong0000-0003-4799-1684
Additional Information:© 2008 American Chemical Society. Received April 15, 2008. Publication Date (Web): May 16, 2008. This work was supported by the National Science Foundation under Grant EECS 0425914 (NSF-NSEC), MARCO, and by DARPA/SPAWAR under Grant N66001-02-1-8914. X.L.F. thanks S. Stryker for help in the engineering of the experimental apparatus. R.H. and X.L.F. thank R. T. Howe, R. Maboudian, J. S. Aldridge, I. Bargatin, M. D. LaHaye, and M. Li for helpful discussions. We thank UC Berkeley Microlab and Stanford Nanofabrication Facility for the use of their facilities.
Funders:
Funding AgencyGrant Number
NSFEECS-0425914
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Office of Naval Research (ONR)N66001-02-1-8914
Issue or Number:6
Record Number:CaltechAUTHORS:20170512-154706804
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170512-154706804
Official Citation:Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature Rongrui He, X. L. Feng, M. L. Roukes, and Peidong Yang Nano Letters 2008 8 (6), 1756-1761 DOI: 10.1021/nl801071w
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77434
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:12 May 2017 22:53
Last Modified:09 Mar 2020 13:19

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