He, Rongrui and Feng, X. L. and Roukes, M. L. and Yang, Peidong (2008) Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature. Nano Letters, 8 (6). pp. 1756-1761. ISSN 1530-6984. doi:10.1021/nl801071w. https://resolver.caltech.edu/CaltechAUTHORS:20170512-154706804
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Abstract
Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (∼90 nm down to ∼30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices’ resonant motions at frequencies as high as ∼100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.
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Additional Information: | © 2008 American Chemical Society. Received April 15, 2008. Publication Date (Web): May 16, 2008. This work was supported by the National Science Foundation under Grant EECS 0425914 (NSF-NSEC), MARCO, and by DARPA/SPAWAR under Grant N66001-02-1-8914. X.L.F. thanks S. Stryker for help in the engineering of the experimental apparatus. R.H. and X.L.F. thank R. T. Howe, R. Maboudian, J. S. Aldridge, I. Bargatin, M. D. LaHaye, and M. Li for helpful discussions. We thank UC Berkeley Microlab and Stanford Nanofabrication Facility for the use of their facilities. | ||||||||||
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Issue or Number: | 6 | ||||||||||
DOI: | 10.1021/nl801071w | ||||||||||
Record Number: | CaltechAUTHORS:20170512-154706804 | ||||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170512-154706804 | ||||||||||
Official Citation: | Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature Rongrui He, X. L. Feng, M. L. Roukes, and Peidong Yang Nano Letters 2008 8 (6), 1756-1761 DOI: 10.1021/nl801071w | ||||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||
ID Code: | 77434 | ||||||||||
Collection: | CaltechAUTHORS | ||||||||||
Deposited By: | Tony Diaz | ||||||||||
Deposited On: | 12 May 2017 22:53 | ||||||||||
Last Modified: | 15 Nov 2021 17:31 |
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