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Investigation of the Size-Scaling Behavior of Spatially Nonuniform Barrier Height Contacts to Semiconductor Surfaces Using Ordered Nanometer-Scale Nickel Arrays on Silicon Electrodes

Rossi, Robert C. and Lewis, Nathan S. (2001) Investigation of the Size-Scaling Behavior of Spatially Nonuniform Barrier Height Contacts to Semiconductor Surfaces Using Ordered Nanometer-Scale Nickel Arrays on Silicon Electrodes. Journal of Physical Chemistry B, 105 (49). pp. 12303-12318. ISSN 1520-6106. https://resolver.caltech.edu/CaltechAUTHORS:20170518-084552546

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Abstract

Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height nanometer-scale n-Si/Ni contacts interspersed among high barrier height n-Si/liquid contacts. To form the arrays, ordered bilayers of close-packed polystyrene spheres were deposited onto (100)-oriented n-type single crystal Si surfaces. The spheres formed a physical mask through which Ni was evaporated to produce regularly spaced and regularly sized Si/Ni contacts. By varying the diameter of the latex spheres from 174 to 1530 nm, geometrically self-similar Si/Ni structures were produced having triangular Si/Ni regions with edge dimensions of 100−800 nm. The resulting Si surfaces were used as electrodes in contact with a methanolic solution of LiClO_4 and 1,1‘-dimethylferrocene^(+/0). The current−voltage and photoresponse properties of these mixed barrier height contacts were strongly dependent on the size of the Ni regions, even though the fraction of the Si surface covered by Ni remained constant. Electrodes formed from large-dimension Si/Ni and Si/electrolyte contacts behaved as expected for two area-weighted Schottky diodes operating independently and in parallel, whereas electrodes having nanoscale Si/Ni regions surrounded by Si/liquid contacts behaved in accord with effective barrier height theories that predict a “pinch-off” effect for mixed barrier height systems of sufficiently small physical dimensions.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp011861cDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp011861cPublisherArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2001 American Chemical Society. Received 15 May 2001. Published online 16 November 2001. Published in print 1 December 2001. The National Science Foundation is acknowledged for supporting this work through grant CHE-9974562 and for providing R. Rossi with a Graduate Research Fellowship. We also thank Prof. R. P. Van Duyne and J. C. Hulteen of Northwestern University for discussions regarding nanosphere lithography, G. Kumaraswamy of Caltech for guidance with TMAFM, and Prof. K. Kavanagh and Dr. B. A. Morgan of University of California, San Diego, for helpful discussions regarding BEEM and SC/M contact stability.
Funders:
Funding AgencyGrant Number
NSFCHE-9974562
Issue or Number:49
Record Number:CaltechAUTHORS:20170518-084552546
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170518-084552546
Official Citation:Investigation of the Size-Scaling Behavior of Spatially Nonuniform Barrier Height Contacts to Semiconductor Surfaces Using Ordered Nanometer-Scale Nickel Arrays on Silicon Electrodes Robert C. Rossi and Nathan S. Lewis The Journal of Physical Chemistry B 2001 105 (49), 12303-12318 DOI: 10.1021/jp011861c
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77553
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:18 May 2017 17:42
Last Modified:03 Oct 2019 17:59

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