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Atomic-scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Lin, Wei-Hsiang and Brar, Victor W. and Jariwala, Deep and Sherrott, Michelle C. and Tseng, Wei-Shiuan and Wu, Chih-I and Yeh, Nai-Chang and Atwater, Harry A. (2017) Atomic-scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control. Chemistry of Materials, 29 (11). pp. 4700-4707. ISSN 0897-4756. doi:10.1021/acs.chemmater.7b00183.

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Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (∼25 cm^2) h-BN sheets ranging in thickness from 1 to 20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtained by scanning tunneling microscopy reveal high h-BN crystalline quality in monolayer samples. Further characterization of 1–20 monolayer samples indicates uniform thickness for wafer-scale areas; this thickness control is a result of precise control of the precursor flow rate, deposition temperature and pressure. Raman and infrared spectroscopy indicate the presence of B–N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy shows the film stoichiometry, and the B/N atom ratio in our films is 1 ± 0.6% across the range of thicknesses. Electrical current transport in metal/insulator/metal (Au/h-BN/Au) heterostructures indicates that our CVD-grown h-BN films can act as excellent tunnel barriers with a high hard-breakdown field strength. Our results suggest that large-area h-BN films are structurally, chemically and electronically uniform over the wafer scale, opening the door to pervasive application as a dielectric in layered nanoelectronic and nanophotonic heterostructures.

Item Type:Article
Related URLs:
URLURL TypeDescription Information Paper
Lin, Wei-Hsiang0000-0003-0037-1277
Jariwala, Deep0000-0002-3570-8768
Sherrott, Michelle C.0000-0002-7503-9714
Yeh, Nai-Chang0000-0002-1826-419X
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2017 American Chemical Society. Received: January 15, 2017; Revised: May 21, 2017; Published: May 22, 2017. The authors gratefully acknowledge support from the Department of Energy, Office of Science under Grant DE-FG02-07ER46405 (W.H.L. and H.A.A.) and for use of facilities of the DOE “Light-Material Interactions in Energy Conversion” Energy Frontier Research Center (DE-SC0001293). D.J. and M.C.S. acknowledge additional support from Resnick Sustainability Institute Graduate and Postdoctoral Fellowships whereas V.W.B. acknowledge additional support from the Kavli Nanoscience Postdoctoral Fellowship. The authors thank Prof. George Rossman for access to the Raman and FTIR tools. The authors thank I-Te Lu for the discussion about the moiré pattern calculation. The authors acknowledge support from the Beckman Institute of the California Institute of Technology to the Molecular Materials Research Center. The authors declare no competing financial interests.
Group:Resnick Sustainability Institute, Kavli Nanoscience Institute
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-07ER46405
Department of Energy (DOE)DE-SC0001293
Resnick Sustainability InstituteUNSPECIFIED
Kavli Nanoscience InstituteUNSPECIFIED
Issue or Number:11
Record Number:CaltechAUTHORS:20170523-090321139
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Official Citation:Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control Wei-Hsiang Lin, Victor W. Brar, Deep Jariwala, Michelle C. Sherrott, Wei-Shiuan Tseng, Chih-I Wu, Nai-Chang Yeh, and Harry A. Atwater Chemistry of Materials 2017 29 (11), 4700-4707 DOI: 10.1021/acs.chemmater.7b00183
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77648
Deposited By: Tony Diaz
Deposited On:23 May 2017 18:22
Last Modified:15 Nov 2021 17:32

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