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Reaction sequence of thin Ni films with (001) 3C-SiC

Gasser, S. M. and Bachli, A. and Kolawa, E. and Nicolet, M. A. (1998) Reaction sequence of thin Ni films with (001) 3C-SiC. In: European Workshop Materials for Advanced Metallization, Abstracts Booklet. IEEE , Piscataway, NJ, p. 191.

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Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400°C and 700°C in vacuum.

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Additional Information:© 1997 IEEE.
Record Number:CaltechAUTHORS:20170523-173026955
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Official Citation:S. M. Gasser, A. Bachli, E. Kolawa and M. A. Nicolet, "Reaction sequence of thin ni films with [001] 3C-SiC," European Workshop Materials for Advanced Metallization,, Villard de Lans, France, 1998, pp. 191-191. doi: 10.1109/MAM.1998.887570
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77681
Deposited On:24 May 2017 17:00
Last Modified:15 Nov 2021 17:33

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