CaltechAUTHORS
  A Caltech Library Service

Reaction sequence of thin Ni films with (001) 3C-SiC

Gasser, S. M. and Bachli, A. and Kolawa, E. and Nicolet, M. A. (1998) Reaction sequence of thin Ni films with (001) 3C-SiC. In: European Workshop Materials for Advanced Metallization, Abstracts Booklet. IEEE , Piscataway, NJ, p. 191. http://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955

[img] PDF - Published Version
See Usage Policy.

61Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955

Abstract

Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400°C and 700°C in vacuum.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/MAM.1998.887570DOIArticle
http://ieeexplore.ieee.org/document/887570/PublisherArticle
Additional Information:© 1997 IEEE.
Record Number:CaltechAUTHORS:20170523-173026955
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955
Official Citation:S. M. Gasser, A. Bachli, E. Kolawa and M. A. Nicolet, "Reaction sequence of thin ni films with [001] 3C-SiC," European Workshop Materials for Advanced Metallization,, Villard de Lans, France, 1998, pp. 191-191. doi: 10.1109/MAM.1998.887570
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77681
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:24 May 2017 17:00
Last Modified:24 May 2017 17:00

Repository Staff Only: item control page