Gasser, S. M. and Bachli, A. and Kolawa, E. and Nicolet, M. A. (1998) Reaction sequence of thin Ni films with (001) 3C-SiC. In: European Workshop Materials for Advanced Metallization, Abstracts Booklet. IEEE , Piscataway, NJ, p. 191. https://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955
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Abstract
Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400°C and 700°C in vacuum.
| Item Type: | Book Section | |||||||||
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| Additional Information: | © 1997 IEEE. | |||||||||
| DOI: | 10.1109/MAM.1998.887570 | |||||||||
| Record Number: | CaltechAUTHORS:20170523-173026955 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955 | |||||||||
| Official Citation: | S. M. Gasser, A. Bachli, E. Kolawa and M. A. Nicolet, "Reaction sequence of thin ni films with [001] 3C-SiC," European Workshop Materials for Advanced Metallization,, Villard de Lans, France, 1998, pp. 191-191. doi: 10.1109/MAM.1998.887570 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 77681 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Kristin Buxton | |||||||||
| Deposited On: | 24 May 2017 17:00 | |||||||||
| Last Modified: | 15 Nov 2021 17:33 |
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