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Scanning Tunneling Microscopy and Spectroscopy of Wet-Chemically Prepared Chlorinated Si(111) Surfaces

Cao, Peigen and Yu, Hongbin and Heath, James R. (2006) Scanning Tunneling Microscopy and Spectroscopy of Wet-Chemically Prepared Chlorinated Si(111) Surfaces. Journal of Physical Chemistry B, 110 (47). pp. 23615-23618. ISSN 1520-6106. https://resolver.caltech.edu/CaltechAUTHORS:20170524-111153989

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Abstract

Chlorine-terminated Si(111) surfaces prepared through the wet-chemical treatment of H-terminated Si(111) surfaces with PCl_5 (in chlorobenzene) were investigated using ultrahigh vacuum scanning tunneling microscopy (UHV cryo-STM) and tunneling spectroscopy. STM images, collected at 77 K, revealed an unreconstructed 1 × 1 structure for the chlorination layer, consistent with what has been observed for the gas phase chlorination of H-terminated Si(111). However, the wet-chemical chlorination is shown to generate etch pits in the Si(111) surface, with an increase in etch pit density correlating with increasing PCl_5 exposure temperatures. These etch pits were assumed to stabilize the edge structure through the partial removal of the 〈112̄〉 step edges. Tunneling spectroscopy revealed a nonzero density of states at zero bias. This is in contrast to the cases of H-, methyl-, or ethyl-terminated Si(111), in which similar measurements have revealed the presence of a large conductance gap.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp064342oDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp064342oPublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/jp064342oPublisherSupporting Information
ORCID:
AuthorORCID
Heath, James R.0000-0001-5356-4385
Additional Information:© 2006 American Chemical Society. Received: July 10, 2006; In Final Form: September 5, 2006. Publication Date (Web): November 9, 2006. The authors acknowledge the National Science Foundation, grant CHE-0213589 (NSL), NSF-CCF-05204490, and the Department of Energy (JRH) for support of this research. The authors thank Professor Nate Lewis, Rosemary Dyane Rohde, Heather Dawn Agnew, Dr. Woon-Seok Yeo, and Dr. Patrick T. Hurley for helpful discussions and technical assistance in preparation of the chlorinated silicon samples.
Funders:
Funding AgencyGrant Number
NSFCHE-0213589
NSFCCF-05204490
Department of Energy (DOE)UNSPECIFIED
Issue or Number:47
Record Number:CaltechAUTHORS:20170524-111153989
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170524-111153989
Official Citation:Scanning Tunneling Microscopy and Spectroscopy of Wet-Chemically Prepared Chlorinated Si(111) Surfaces Peigen Cao, Hongbin Yu, and James R Heath The Journal of Physical Chemistry B 2006 110 (47), 23615-23618 DOI: 10.1021/jp064342o
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77710
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 May 2017 18:26
Last Modified:03 Oct 2019 18:00

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