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On the Link Between Electron Shadowing And Charging Damage

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) On the Link Between Electron Shadowing And Charging Damage. In: 2nd International Symposium on Plasma Process-Induced Damage. American Vacuum Society , New York, NY, pp. 63-66. ISBN 0-9651-5771-7.

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Charging and topography evolution simulations during plasma etching of high aspect ratio line-and-space patterns reveal that electron shadowing of the sidewalls critically affects charging damage. Decreasing the degree of electron shadowing by using thinner masks decreases the potentials of the etched features with a concomitant reduction in catastrophic tunneling currents through underlying thin gate oxides. Simultaneously, the potential distribution in the trench changes, significantly perturbing the local ion dynamics which, in turn, cause the notching effect to worsen. Since the latter can be reduced independently by selecting an appropriate etch chemistry, the use of thinner (hard) masks is predicted to be advantageous for the prevention of gate oxide failure.

Item Type:Book Section
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Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 American Vacuum Society.
Record Number:CaltechAUTHORS:20170525-153739826
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Official Citation:Gyeong S. Hwang and K. P. Giapis, "On the Link Between Electron Shadowing And Charging Damage," 2nd International Symposium on Plasma Process-Induced Damage, Monterey, California, USA, 1997, pp. 63-66. doi: 10.1109/PPID.1997.596692
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77774
Deposited On:25 May 2017 23:00
Last Modified:15 Nov 2021 17:33

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