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Gas-phase Silicon Etching With Bromine Trifluoride

Wang, Xuan-Qi and Yang, Xing and Walsh, Ken and Tai, Yu-Chong (1997) Gas-phase Silicon Etching With Bromine Trifluoride. In: Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97). Vol.2. IEEE , Piscataway, NJ, pp. 1505-1508. ISBN 0-7803-3829-4.

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We report the first study of gas phase silicon micromachining using pure bromine trifluoride (BrF/sub 3/) gas at room temperature. This work includes both the design of a new apparatus and etching characterization. Consistent etching results and high molecular etching efficiency (80%) have been achieved by performing the etching in a controlled pulse mode. This pure gaseous BrF/sub 3/ etching process is isotropic and has a high etch rate with superb selectivity over silicon dioxide (3000:1), silicon nitride (400-800:1) and photoresist (1000:1). Moreover, gaseous BrF/sub 3/ etching has also been demonstrated in surface micromachining process, where silicon nitride channels and membranes using polysilicon as the sacrificial layer have been successfully fabricated.

Item Type:Book Section
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Tai, Yu-Chong0000-0001-8529-106X
Additional Information:© 1997 IEEE. The authors would like to thank Trevor Roper, Larry Begay for help with the system setup and Tomas Tsao, Charles Grosjean with helpful discussions.
Subject Keywords:Silicon, Reservoirs, Temperature, Valves, Nitrogen, Safety, Dry etching, Chemical processes, Differential equations, Xenon
Record Number:CaltechAUTHORS:20170525-161134683
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Official Citation:Xuan-Qi Wang, Xing Yang, K. Walsh and Yu-Chong Tai, "Gas-phase silicon etching with bromine trifluoride," Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on, Chicago, IL, 1997, pp. 1505-1508 vol.2. doi: 10.1109/SENSOR.1997.635751
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:77777
Deposited On:26 May 2017 17:46
Last Modified:15 Nov 2021 17:33

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