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Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

Wang, Huolei and Kim, Dongwan and Harfouche, Mark and Satyan, Naresh and Rakuljic, George and Yariv, Amnon (2017) Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser. In: Conference on Lasers and Electro-Optics 2017. Optical Society of America , Washington, DC, Art. No. AM2B.2. ISBN 978-1-943580-27-9.

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We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.

Item Type:Book Section
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URLURL TypeDescription
Wang, Huolei0000-0001-6245-8090
Kim, Dongwan0000-0002-5661-2503
Harfouche, Mark0000-0002-4657-4603
Additional Information:© 2017 OSA.
Record Number:CaltechAUTHORS:20170626-081437206
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Official Citation:W. Huolei, D. Kim, M. Harfouche, N. Satyan, G. Rakuljic, and A. Yariv, "Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optical Society of America, 2017), paper AM2B.2.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:78570
Deposited By: George Porter
Deposited On:26 Jun 2017 15:23
Last Modified:03 Oct 2019 18:09

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