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Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

Wang, Huolei and Kim, Dongwan and Harfouche, Mark and Satyan, Naresh and Rakuljic, George and Yariv, Amnon (2017) Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser. In: Conference on Lasers and Electro-Optics 2017. Optical Society of America , Washington, DC, Art. No. AM2B.2. ISBN 978-1-943580-27-9. http://resolver.caltech.edu/CaltechAUTHORS:20170626-081437206

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Abstract

We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1364/CLEO_AT.2017.AM2B.2DOIArticle
https://www.osapublishing.org/abstract.cfm?uri=CLEO_AT-2017-AM2B.2PublisherArticle
ORCID:
AuthorORCID
Wang, Huolei0000-0001-6245-8090
Kim, Dongwan0000-0002-5661-2503
Harfouche, Mark0000-0002-4657-4603
Additional Information:© 2017 OSA.
Record Number:CaltechAUTHORS:20170626-081437206
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20170626-081437206
Official Citation:W. Huolei, D. Kim, M. Harfouche, N. Satyan, G. Rakuljic, and A. Yariv, "Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optical Society of America, 2017), paper AM2B.2.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:78570
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:26 Jun 2017 15:23
Last Modified:31 Oct 2017 16:15

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