Rais-Zadeh, Mina and Zhu, Haoshen and Ansari, Azadeh (2017) Applications of gallium nitride in MEMS and acoustic microsystems. In: 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE , New York, NY, pp. 9-11. ISBN 978-1-5090-5237-0. https://resolver.caltech.edu/CaltechAUTHORS:20170629-121707529
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Abstract
This paper covers various sensors and microsystems based on gallium nitride (GaN) micro mechanical (acoustic) resonators. III-nitrides have been a subject of extensive research for power electronics as well as photonics applications but their use in micro-electromechanical systems (MEMS) has been limited. In this paper, basic material properties of this group of materials (GaN, AlGaN, and other III-nitrides) are discussed and their current and future applications in MEMS and Microwave circuits are detailed.
| Item Type: | Book Section | |||||||||
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| Additional Information: | © 2017 IEEE. Date Added to IEEE Xplore: 09 March 2017. This work is supported by the ONR under the Young Investigator Program. | |||||||||
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| Subject Keywords: | Gallium nitride, MEMS, non-reciprocal, resonant body transistors, resonators | |||||||||
| Record Number: | CaltechAUTHORS:20170629-121707529 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170629-121707529 | |||||||||
| Official Citation: | M. Rais-Zadeh, H. Zhu and A. Ansari, "Applications of gallium nitride in MEMS and acoustic microsystems," 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Phoenix, AZ, 2017, pp. 9-11. doi: 10.1109/SIRF.2017.7874356 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 78694 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 30 Jun 2017 17:38 | |||||||||
| Last Modified: | 03 Oct 2019 18:11 |
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