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All refractory NbN/MgO/NbN tunnel junctions

LeDuc, H. G. and Stern, J. A. and Thakoor, S. and Khanna, S. K. (1987) All refractory NbN/MgO/NbN tunnel junctions. IEEE Transactions on Magnetics, 23 (2). pp. 863-865. ISSN 0018-9464. doi:10.1109/TMAG.1987.1064988.

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We report the fabrication of all-refractory superconductor-insulator-superconductor tunnel junctions of the form NbN/MgO/NbN. The MgO insulating barrier was deposited by e-beam evaporation. High quality junctions were fabricated with sum gaps of 5.2 meV, and a small subgap leakage parameter (V_m=30 mV, measured at 3mV). These devices are for eventual use as quasiparticle mixer elements in millimeter/submiltimeter wave heterodyne receivers. Fabrication techniques and current-voltage characteristics are discussed. We also propose a new growth mode for MgO films on NbN.

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Additional Information:© 1987 IEEE. Manuscript received September 30, 1986. This work was carried out by the Jet Propulsion Laboratory, California Institute of Technology, and was supported by the National Aeronautics and Space Administration (NASA). We benefited greatly from discussions with Dr. John Lambe, Professor Tom Phillips, and Michael Wengler. Jeff Stern would like to thank NASA for his Graduate Student Traineeship
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NASA Graduate Student Research FellowshipUNSPECIFIED
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Official Citation:H. LeDuc, J. Stern, S. Thakoor and S. Khanna, "All refractory NbN/MgO/NbN tunnel junctions," in IEEE Transactions on Magnetics, vol. 23, no. 2, pp. 863-865, Mar 1987. doi: 10.1109/TMAG.1987.1064988
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79164
Deposited On:18 Jul 2017 23:38
Last Modified:15 Nov 2021 17:46

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