Wang, H. and Liu, Y. Y. and Mittelstein, M. and Chen, T. R. and Yariv, A. (1987) GaInAsP/InP unstable resonator lasers. Electronics Letters, 23 (18). pp. 949-951. ISSN 0013-5194. doi:10.1049/el:19870668. https://resolver.caltech.edu/CaltechAUTHORS:20170718-152546928
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Abstract
Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1987 The Institution of Electrical Engineers. The support of the Office of Naval Research and of the Army Research Office is gratefully acknowledged. | |||||||||
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| Subject Keywords: | Semiconductor lasers | |||||||||
| Issue or Number: | 18 | |||||||||
| DOI: | 10.1049/el:19870668 | |||||||||
| Record Number: | CaltechAUTHORS:20170718-152546928 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170718-152546928 | |||||||||
| Official Citation: | Wang, H.; Liu, Y.Y.; Mittelstein, M.; Chen, T.R.; Yariv, A.: 'GaInAsP/InP unstable resonator lasers', Electronics Letters, 1987, 23, (18), p. 949-951, DOI: 10.1049/el:19870668 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19870668 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79165 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 18 Jul 2017 23:37 | |||||||||
| Last Modified: | 15 Nov 2021 17:46 |
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