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GaInAsP/InP unstable resonator lasers

Wang, H. and Liu, Y. Y. and Mittelstein, M. and Chen, T. R. and Yariv, A. (1987) GaInAsP/InP unstable resonator lasers. Electronics Letters, 23 (18). pp. 949-951. ISSN 0013-5194. doi:10.1049/el:19870668.

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Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.

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Additional Information:© 1987 The Institution of Electrical Engineers. The support of the Office of Naval Research and of the Army Research Office is gratefully acknowledged.
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Subject Keywords:Semiconductor lasers
Issue or Number:18
Record Number:CaltechAUTHORS:20170718-152546928
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Official Citation:Wang, H.; Liu, Y.Y.; Mittelstein, M.; Chen, T.R.; Yariv, A.: 'GaInAsP/InP unstable resonator lasers', Electronics Letters, 1987, 23, (18), p. 949-951, DOI: 10.1049/el:19870668 IET Digital Library,
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79165
Deposited On:18 Jul 2017 23:37
Last Modified:15 Nov 2021 17:46

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