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GaInAsP/InP unstable resonator lasers

Wang, H. and Liu, Y. Y. and Mittelstein, M. and Chen, T. R. and Yariv, A. (1987) GaInAsP/InP unstable resonator lasers. Electronics Letters, 23 (18). pp. 949-951. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:20170718-152546928

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Abstract

Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/el:19870668DOIArticle
http://digital-library.theiet.org/content/journals/10.1049/el_19870668PublisherArticle
Additional Information:© 1987 The Institution of Electrical Engineers. The support of the Office of Naval Research and of the Army Research Office is gratefully acknowledged.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Subject Keywords:Semiconductor lasers
Issue or Number:18
Record Number:CaltechAUTHORS:20170718-152546928
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170718-152546928
Official Citation:Wang, H.; Liu, Y.Y.; Mittelstein, M.; Chen, T.R.; Yariv, A.: 'GaInAsP/InP unstable resonator lasers', Electronics Letters, 1987, 23, (18), p. 949-951, DOI: 10.1049/el:19870668 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19870668
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79165
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:18 Jul 2017 23:37
Last Modified:03 Oct 2019 18:16

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