CaltechAUTHORS
  A Caltech Library Service
Login

High speed modulation and CW operation of AlGaAs/GaAs lasers on Si

Chen, H. Z. and Paslaski, J. and Ghaffari, A. and Wang, H. and Morkoç, H. and Yariv, A. (1987) High speed modulation and CW operation of AlGaAs/GaAs lasers on Si. In: 1987 International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 238-241. https://resolver.caltech.edu/CaltechAUTHORS:20170718-153334822

[img] PDF - Published Version
See Usage Policy.
264kB

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20170718-153334822

Abstract

Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/IEDM.1987.191398DOIArticle
http://ieeexplore.ieee.org.clsproxy.library.caltech.edu/document/1487356/PublisherArticle
Additional Information:© 1987 IEEE. This work is supported by Office of Naval Research, Air Force Office of Scientific Research and the National Science Foundation. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
NSFUNSPECIFIED
Strategic Defense Initiative Organization (SDIO)UNSPECIFIED
DOI:10.1109/IEDM.1987.191398
Record Number:CaltechAUTHORS:20170718-153334822
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170718-153334822
Official Citation:H. Z. Chen, J. Paslaski, A. Ghaffari, H. Wang, H. Morkoc and A. Yariv, "High speed modulation and CW operation of AlGaAs/GaAs lasers on Si," 1987 International Electron Devices Meeting, 1987, pp. 238-241. doi: 10.1109/IEDM.1987.191398
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79166
Collection:CaltechAUTHORS
Deposited By:INVALID USER
Deposited On:18 Jul 2017 23:36
Last Modified:15 Nov 2021 17:46

Repository Staff Only: item control page

CaltechAUTHORS is powered by EPrints 3.3 which is developed by the School of Electronics and Computer Science at the University of Southampton. More information and software credits.