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High speed modulation and CW operation of AlGaAs/GaAs lasers on Si

Chen, H. Z. and Paslaski, J. and Ghaffari, A. and Wang, H. and Morkoç, H. and Yariv, A. (1987) High speed modulation and CW operation of AlGaAs/GaAs lasers on Si. In: 1987 International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 238-241.

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Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.

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Additional Information:© 1987 IEEE. This work is supported by Office of Naval Research, Air Force Office of Scientific Research and the National Science Foundation. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.
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Office of Naval Research (ONR)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
Strategic Defense Initiative Organization (SDIO)UNSPECIFIED
Record Number:CaltechAUTHORS:20170718-153334822
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Official Citation:H. Z. Chen, J. Paslaski, A. Ghaffari, H. Wang, H. Morkoc and A. Yariv, "High speed modulation and CW operation of AlGaAs/GaAs lasers on Si," 1987 International Electron Devices Meeting, 1987, pp. 238-241. doi: 10.1109/IEDM.1987.191398
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79166
Deposited On:18 Jul 2017 23:36
Last Modified:15 Nov 2021 17:46

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