Chen, T. R. and Zhuang, Y. H. and Chang, B. and Yi, M. B. and Yariv, Amnon (1987) A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration. IEEE Electron Device Letters, 8 (5). pp. 191-193. ISSN 0741-3106. doi:10.1109/EDL.1987.26599. https://resolver.caltech.edu/CaltechAUTHORS:20170718-165038642
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Abstract
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1987 IEEE. Manuscript received January 20, 1987. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office. | |||||||||
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| Issue or Number: | 5 | |||||||||
| DOI: | 10.1109/EDL.1987.26599 | |||||||||
| Record Number: | CaltechAUTHORS:20170718-165038642 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170718-165038642 | |||||||||
| Official Citation: | T. R. Chen, Y. H. Zhuang, B. Chang, M. B. Yi and A. Yariv, "A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration," in IEEE Electron Device Letters, vol. 8, no. 5, pp. 191-193, May 1987. doi: 10.1109/EDL.1987.26599 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79170 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 19 Jul 2017 16:59 | |||||||||
| Last Modified: | 15 Nov 2021 17:46 |
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