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A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration

Chen, T. R. and Zhuang, Y. H. and Chang, B. and Yi, M. B. and Yariv, Amnon (1987) A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration. IEEE Electron Device Letters, 8 (5). pp. 191-193. ISSN 0741-3106. https://resolver.caltech.edu/CaltechAUTHORS:20170718-165038642

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Abstract

A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/EDL.1987.26599DOIArticle
http://ieeexplore.ieee.org/document/1487149/PublisherArticle
Additional Information:© 1987 IEEE. Manuscript received January 20, 1987. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
NSFUNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Issue or Number:5
Record Number:CaltechAUTHORS:20170718-165038642
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170718-165038642
Official Citation:T. R. Chen, Y. H. Zhuang, B. Chang, M. B. Yi and A. Yariv, "A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration," in IEEE Electron Device Letters, vol. 8, no. 5, pp. 191-193, May 1987. doi: 10.1109/EDL.1987.26599
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79170
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:19 Jul 2017 16:59
Last Modified:03 Oct 2019 18:16

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