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Diode-grids for millimeter-wave phase-shifters and frequency doublers

Lam, Wayne W. and Chen, Howard and Rutledge, David B. and Jou, Christina F. and Luchmann, Neville C., Jr. (1987) Diode-grids for millimeter-wave phase-shifters and frequency doublers. In: 1987 Antennas and Propagation Society International Symposium. IEEE , Piscataway, NJ, pp. 1190-1193.

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Diode-grids have been fabricated on 2-cm square monolithic gallium-arsenide wafers with 1600 Schottky varactor-diodes. A computer-controlled reflectometer that uses a wave-front division interference technique was developed to measure the reflection coefficient of the diode-grids. A 70° phase shift with a 6-dB loss was obtained at 93 GHz when the bias on the diode-grid was changed from -3V to +1V. A second harmonic conversion efficiency of 16% and an output power of 0.5 W was obtained at 66 GHz when the diode-grid was pumped with a pulsed magnetron at 33 GHz.

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Additional Information:© 1987 IEEE. This work was supported by the Army Research Office, the U.S. Army Harry Diamond Laboratory, the Jet Propulsion Laboratory, and by TRW under the University of California MICRO program. Wayne Lam acknowledges the support of an AMOCO Foundation Fellowship.
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Army Research Office (ARO)UNSPECIFIED
U. S. Army Harry Diamond LaboratoryUNSPECIFIED
Record Number:CaltechAUTHORS:20170718-170710700
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Official Citation:W. Lam, H. Chen, D. Rutledge, C. Jou and N. Luchmann, "Diode-grids for millimeter-wave phase-shifters and frequency doublers," 1987 Antennas and Propagation Society International Symposium, Blacksburg, VA, USA, 1987, pp. 1190-1193. doi: 10.1109/APS.1987.1149933
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79172
Deposited On:19 Jul 2017 16:56
Last Modified:15 Nov 2021 17:46

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