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Hall Mobility Measurements and Chemical Stability of Ultrathin, Methylated Si(111)-on-Insulator Films

Green, Jonathan E. and Wong, Shelley J. and Heath, James R. (2008) Hall Mobility Measurements and Chemical Stability of Ultrathin, Methylated Si(111)-on-Insulator Films. Journal of Physical Chemistry C, 112 (13). pp. 5185-5189. ISSN 1932-7447. https://resolver.caltech.edu/CaltechAUTHORS:20170719-065012335

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Abstract

The chemical and electronic properties of 10−20 nm thick, methylated Si(111)-on-insulator (CH_3/Si(111)_(SOI)) thin films, prepared using a wet chemical chlorination/methylation procedure, are investigated. X-ray photoelectron spectroscopy reveals that CH_3/Si(111)_(SOI) is resistant to oxidation upon exposure to air and to various device fabrication schemes and associated chemicals. Temperature-dependent Hall mobility measurements yield results that are dependent upon the duration of the chlorination step. For short-time chlorination steps, bulklike mobilities are observed, and the dominant scattering mechanism arises from ionized impurities. For longer time chlorination steps, surface roughness or neutral impurity scattering limit the carrier mobilities.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp710482tDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp710482tPublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/jp710482tPublisherSupporting Information
ORCID:
AuthorORCID
Heath, James R.0000-0001-5356-4385
Additional Information:© 2008 American Chemical Society. Received 30 October 2007. Published online 11 March 2008. Published in print 1 April 2008. We acknowledge assistance from the Molecular Materials Research Center of the Beckman Institute at Caltech. We thank Ke Xu, Dr. Ezekiel Johnston-Halperin, Dr. Lauren Webb, and Prof. Nate Lewis for helpful discussions. This research was supported by the NSF (NMF-CCF-05204490) and by the MARCO Center for Advanced Materials and Devices.
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Funding AgencyGrant Number
CaltechUNSPECIFIED
NSFCCF-05204490
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Issue or Number:13
Record Number:CaltechAUTHORS:20170719-065012335
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170719-065012335
Official Citation:Hall Mobility Measurements and Chemical Stability of Ultrathin, Methylated Si(111)-on-Insulator Films Jonathan E. Green, Shelley J. Wong, and James R. Heath The Journal of Physical Chemistry C 2008 112 (13), 5185-5189 DOI: 10.1021/jp710482t
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79184
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:19 Jul 2017 15:04
Last Modified:03 Oct 2019 18:17

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