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Resonant tunneling transistors with controllable negative differential resistances

Bonnefoi, A. R. and McGill, T. C. and Burnham, R. D. (1985) Resonant tunneling transistors with controllable negative differential resistances. IEEE Electron Device Letters, 6 (12). pp. 636-638. ISSN 0741-3106. doi:10.1109/EDL.1985.26258.

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Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quantum well are presented and analyzed theoretically. Each proposed device consists of a resonant tunneling double barrier heterostructure integrated with a Schottky barrier field-effect transistor configuration. The essential feature of these devices is the presence, in their output current-voltage (I_{D} - V_{D}) curves, of negative differential resistances controlled by a gate voltage. Because of the high-speed characteristics associated with tunnel structures, these devices could find applications in tunable millimeter-wave oscillators, negative resistance amplifiers, and high-speed digital circuits.

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Additional Information:© 1985 IEEE. Manuscript received August 5, 1985; revised September 20, 1985. This work was supported in part by the Defense Advanced Research Projects Agency under Contract N00014-84-C-0083 and the Office of Naval Research under Contract N00014-82-C-0556.
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Defense Advanced Research Projects Agency (DARPA)N00014-84-C-0083
Office of Naval Research (ONR)N00014-82-C-0556
Issue or Number:12
Record Number:CaltechAUTHORS:20170719-172238067
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Official Citation:A. R. Bonnefoi, T. C. McGill and R. D. Burnham, "Resonant tunneling transistors with controllable negative differential resistances," in IEEE Electron Device Letters, vol. 6, no. 12, pp. 636-638, Dec. 1985. doi: 10.1109/EDL.1985.26258
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79220
Deposited By: Kristin Buxton
Deposited On:20 Jul 2017 18:58
Last Modified:15 Nov 2021 17:46

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