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An improved forward I-V method for nonideal Schottky diodes with high series resistance

Lien, C.-D. and So, F. C. T. and Nicolet, M.-A. (1984) An improved forward I-V method for nonideal Schottky diodes with high series resistance. IEEE Transactions on Electron Devices, 31 (10). pp. 1502-1503. ISSN 0018-9383. doi:10.1109/T-ED.1984.21739.

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Two methods are described to obtain the value of the series resistance(R)of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V_D (= V - IR)which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height Φ_(B0) of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of R, 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant R assumption can be checked by the linearity of the ln(I) versus V_D curve. The methods are illustrated on the experimental data of a real diode.

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Additional Information:© 1984 IEEE. Manuscript received April 20, 1984. This work was sponsored in part by the Jet Propulsion Laboratory, California Institute of Technology, Director's Discretionary Fund, through an agreement with the National Aeronautics and Space Administration (A. Morrison).
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Issue or Number:10
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Official Citation:C. D. Lien, F. C. T. So and M. A. Nicolet, "An improved forward I-V method for nonideal Schottky diodes with high series resistance," in IEEE Transactions on Electron Devices, vol. 31, no. 10, pp. 1502-1503, Oct. 1984. doi: 10.1109/T-ED.1984.21739
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79439
Deposited By: Kristin Buxton
Deposited On:26 Jul 2017 21:48
Last Modified:15 Nov 2021 17:48

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