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Utilization of NiSi_2 as an interconnect material for VLSI

Bartur, M. and Nicolet, M.-A. (1984) Utilization of NiSi_2 as an interconnect material for VLSI. IEEE Electron Device Letters, 5 (3). pp. 88-90. ISSN 0741-3106. doi:10.1109/EDL.1984.25841.

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The applicability of NiSi2as an interconnect material was investigated using narrow (5 µm- × 2600-µm) lines. 2500-Å-thick silicide lines were thermally oxidized to form a passivation layer of SiO_2 for the next metallization level. Isolation of more than 50 V for 2200-Å SiO_2 is achieved. The interconnect resistivity following the oxidation is 1.2-1.4 Ω. The maximum current capability of the lines was found to be > 5 × 106A/cm^2 and their stability under prolonged high current densities was demonstrated. We propose a scheme to increase the local metallization-level density using NiSi_2 as an interconnect.

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Additional Information:© 1984 IEEE. Manuscript received November 14, 1983; revised January 9, 1984. This work was supported in part by Mr. Arnold Applebaum, President of Solid-state Devices, Inc.
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Arnold ApplebaumUNSPECIFIED
Issue or Number:3
Record Number:CaltechAUTHORS:20170726-174538830
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Official Citation:M. Bartur and M. A. Nicolet, "Utilization of NiSi2as an interconnect material for VLSI," in IEEE Electron Device Letters, vol. 5, no. 3, pp. 88-90, Mar 1984. doi: 10.1109/EDL.1984.25841
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79474
Deposited By: Kristin Buxton
Deposited On:27 Jul 2017 02:32
Last Modified:15 Nov 2021 17:48

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