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Vertical FET's in GaAs

Rav-Noy, Z. and Schreter, U. and Mukai, S. and Kapon, E. and Smith, J. S. and Chiu, L. C. and Margalit, S. and Yariv, A. (1984) Vertical FET's in GaAs. IEEE Electron Device Letters, 5 (7). pp. 228-230. ISSN 0741-3106. https://resolver.caltech.edu/CaltechAUTHORS:20170727-162918107

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Abstract

Vertical FET's in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance g_m high as 280 mS/mm have been obtained.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/EDL.1984.25899DOIArticle
http://ieeexplore.ieee.org/document/1484275/PublisherArticle
Additional Information:© 1984 IEEE. Manuscript received January 17, 1984; revised March 8, 1984. This work was supported by the office of Naval Research and the NSF (Optical Communication Project).
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
NSFUNSPECIFIED
Issue or Number:7
Record Number:CaltechAUTHORS:20170727-162918107
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170727-162918107
Official Citation:Z. Rav-Noy et al., "Vertical FET's in GaAs," in IEEE Electron Device Letters, vol. 5, no. 7, pp. 228-230, Jul 1984. doi: 10.1109/EDL.1984.25899
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79513
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:28 Jul 2017 16:12
Last Modified:03 Oct 2019 18:20

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