Rav-Noy, Z. and Schreter, U. and Mukai, S. and Kapon, E. and Smith, J. S. and Chiu, L. C. and Margalit, S. and Yariv, A. (1984) Vertical FET's in GaAs. IEEE Electron Device Letters, 5 (7). pp. 228-230. ISSN 0741-3106. doi:10.1109/EDL.1984.25899. https://resolver.caltech.edu/CaltechAUTHORS:20170727-162918107
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Abstract
Vertical FET's in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance g_m high as 280 mS/mm have been obtained.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1984 IEEE. Manuscript received January 17, 1984; revised March 8, 1984. This work was supported by the office of Naval Research and the NSF (Optical Communication Project). | |||||||||
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| Issue or Number: | 7 | |||||||||
| DOI: | 10.1109/EDL.1984.25899 | |||||||||
| Record Number: | CaltechAUTHORS:20170727-162918107 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170727-162918107 | |||||||||
| Official Citation: | Z. Rav-Noy et al., "Vertical FET's in GaAs," in IEEE Electron Device Letters, vol. 5, no. 7, pp. 228-230, Jul 1984. doi: 10.1109/EDL.1984.25899 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79513 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Kristin Buxton | |||||||||
| Deposited On: | 28 Jul 2017 16:12 | |||||||||
| Last Modified: | 15 Nov 2021 17:48 |
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