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High-speed Schottky photodiode on semi-insulating GaAs

Rav-Noy, Z. and Harder, C. and Schreter, U. and Margalit, S. and Yariv, A. (1983) High-speed Schottky photodiode on semi-insulating GaAs. Electronics Letters, 19 (19). p. 753. ISSN 0013-5194. doi:10.1049/el:19830513.

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A high-speed GaAs photodiode has been fabricated on a GaAs semi-insulating substrate. The photodiode has an active area of 8 μm × 15 μm and a bandwidth in excess of 9 GHz. This Schottky photodiodes is suitable for monolithic integration with other optoelectronic components.

Item Type:Article
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Additional Information:© 1983 The Institution of Electrical Engineers. 19th July 1983.
Subject Keywords:Semiconductor devices and materials, Photodiodes
Issue or Number:19
Record Number:CaltechAUTHORS:20170731-144932154
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Official Citation:Rav-Noy, Z.; Harder, C.; Schreter, U.; Margalit, S.; Yariv, A.: 'High-speed Schottky photodiode on semi-insulating GaAs', Electronics Letters, 1983, 19, (19), p. 753-754, DOI: 10.1049/el:19830513 IET Digital Library,
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79619
Deposited On:01 Aug 2017 19:28
Last Modified:04 Oct 2022 21:34

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