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Single-carrier-type dominated impact ionisation in multilayer structures

Blauvelt, H. and Margalit, S. and Yariv, A. (1982) Single-carrier-type dominated impact ionisation in multilayer structures. Electronics Letters, 18 (9). p. 375. ISSN 00135194. http://resolver.caltech.edu/CaltechAUTHORS:20170731-150148092

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Abstract

A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/el:19820257DOIArticle
http://digital-library.theiet.org/content/journals/10.1049/el_19820257PublisherArticle
Additional Information:© 1982 The Institution of Electrical Engineers. 23rd March 1982. This research was sponsored by the National Science Foundation and the Office of Naval Research.
Funders:
Funding AgencyGrant Number
NSFUNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
Subject Keywords:Semiconductor devices and materials, Photodetectors
Record Number:CaltechAUTHORS:20170731-150148092
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20170731-150148092
Official Citation:Blauvelt, H.; Margalit, S.; Yariv, A.: 'Single-carrier-type dominated impact ionisation in multilayer structures', Electronics Letters, 1982, 18, (9), p. 375-376, DOI: 10.1049/el:19820257 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19820257
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79623
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:01 Aug 2017 19:24
Last Modified:01 Aug 2017 19:24

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