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Single-carrier-type dominated impact ionisation in multilayer structures

Blauvelt, H. and Margalit, S. and Yariv, A. (1982) Single-carrier-type dominated impact ionisation in multilayer structures. Electronics Letters, 18 (9). p. 375. ISSN 0013-5194. doi:10.1049/el:19820257.

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A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.

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Additional Information:© 1982 The Institution of Electrical Engineers. 23rd March 1982. This research was sponsored by the National Science Foundation and the Office of Naval Research.
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Office of Naval Research (ONR)UNSPECIFIED
Subject Keywords:Semiconductor devices and materials, Photodetectors
Issue or Number:9
Record Number:CaltechAUTHORS:20170731-150148092
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Official Citation:Blauvelt, H.; Margalit, S.; Yariv, A.: 'Single-carrier-type dominated impact ionisation in multilayer structures', Electronics Letters, 1982, 18, (9), p. 375-376, DOI: 10.1049/el:19820257 IET Digital Library,
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79623
Deposited On:01 Aug 2017 19:24
Last Modified:04 Oct 2022 21:35

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