Blauvelt, H. and Margalit, S. and Yariv, A. (1982) Single-carrier-type dominated impact ionisation in multilayer structures. Electronics Letters, 18 (9). p. 375. ISSN 0013-5194. doi:10.1049/el:19820257. https://resolver.caltech.edu/CaltechAUTHORS:20170731-150148092
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Abstract
A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1982 The Institution of Electrical Engineers. 23rd March 1982. This research was sponsored by the National Science Foundation and the Office of Naval Research. | |||||||||
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| Subject Keywords: | Semiconductor devices and materials, Photodetectors | |||||||||
| Issue or Number: | 9 | |||||||||
| DOI: | 10.1049/el:19820257 | |||||||||
| Record Number: | CaltechAUTHORS:20170731-150148092 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170731-150148092 | |||||||||
| Official Citation: | Blauvelt, H.; Margalit, S.; Yariv, A.: 'Single-carrier-type dominated impact ionisation in multilayer structures', Electronics Letters, 1982, 18, (9), p. 375-376, DOI: 10.1049/el:19820257 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19820257 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79623 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 01 Aug 2017 19:24 | |||||||||
| Last Modified: | 04 Oct 2022 21:35 |
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