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A proposed new method for damping relaxation oscillations in laser diodes

Katz, J. and Margalit, S. and Yariv, A. (1982) A proposed new method for damping relaxation oscillations in laser diodes. IEEE Electron Device Letters, 3 (11). pp. 333-335. ISSN 0741-3106. doi:10.1109/EDL.1982.25591.

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A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.

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Additional Information:© 1982 IEEE. Manuscript received August 9, 1982. The research described in this paper was carried out by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration. Portions of this research were also sponsored by the Office of Naval Research and the National Science Foundation.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:11
Record Number:CaltechAUTHORS:20170731-150614993
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Official Citation:J. Katz, S. Margalit and A. Yariv, "A proposed new method for damping relaxation oscillations in laser diodes," in IEEE Electron Device Letters, vol. 3, no. 11, pp. 333-335, Nov 1982. doi: 10.1109/EDL.1982.25591
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79625
Deposited On:01 Aug 2017 19:24
Last Modified:15 Nov 2021 17:49

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