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Electrical properties of multi p-n junction devices

Katz, Joseph and Margalit, Shlomo and Yariv, Amnon (1982) Electrical properties of multi p-n junction devices. IEEE Transactions on Electron Devices, 29 (6). pp. 977-984. ISSN 0018-9383. doi:10.1109/T-ED.1982.20817.

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The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

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Additional Information:© 1982 IEEE. Manuscript received November 16, 1981; revised February 3, 1982. This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under NASA Contract NAS7-100, the Office of Naval Research and the National Science Foundation
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:20170731-152344583
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Official Citation:J. Katz, S. Margalit and A. Yariv, "Electrical properties of multi p-n junction devices," in IEEE Transactions on Electron Devices, vol. 29, no. 6, pp. 977-984, Jun 1982. doi: 10.1109/T-ED.1982.20817
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79628
Deposited On:01 Aug 2017 19:20
Last Modified:15 Nov 2021 17:49

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