Katz, Joseph and Margalit, Shlomo and Yariv, Amnon (1982) Electrical properties of multi p-n junction devices. IEEE Transactions on Electron Devices, 29 (6). pp. 977-984. ISSN 0018-9383. doi:10.1109/T-ED.1982.20817. https://resolver.caltech.edu/CaltechAUTHORS:20170731-152344583
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Abstract
The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1982 IEEE. Manuscript received November 16, 1981; revised February 3, 1982. This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under NASA Contract NAS7-100, the Office of Naval Research and the National Science Foundation | |||||||||
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| Issue or Number: | 6 | |||||||||
| DOI: | 10.1109/T-ED.1982.20817 | |||||||||
| Record Number: | CaltechAUTHORS:20170731-152344583 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170731-152344583 | |||||||||
| Official Citation: | J. Katz, S. Margalit and A. Yariv, "Electrical properties of multi p-n junction devices," in IEEE Transactions on Electron Devices, vol. 29, no. 6, pp. 977-984, Jun 1982. doi: 10.1109/T-ED.1982.20817 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79628 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 01 Aug 2017 19:20 | |||||||||
| Last Modified: | 15 Nov 2021 17:49 |
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