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Investigation of titanium-nitride layers for solar-cell contacts

von Seefeld, Hermann and Cheung, Nathan W. and Mäenpää, Martti and Nicolet, Marc-A. (1980) Investigation of titanium-nitride layers for solar-cell contacts. IEEE Transactions on Electron Devices, 27 (4). pp. 873-876. ISSN 0018-9383. doi:10.1109/T-ED.1980.19949.

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Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon, Backscattering analysis (2-MeV He+, RBS) indicates that the integrity of the system is basically preserved during annealing at 600° for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (<5 at %) a resistivity of 170 µΩ . cm has been found.

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Additional Information:© 1980 IEEE. Manuscript received August 16, 1979; revised December 11, 1979. This research was supported initially by the Jet Propulsion Laboratory (R. Lutwack) and subsequently by the Department of Energy, monitored by Sandia Laboratories, Albuquerque, NM.
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Department of Energy (DOE)UNSPECIFIED
Sandia LaboratoriesUNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:20170802-155903092
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Official Citation:H. von Seefeld, N. W. Cheung, M. Maenpaa and M. A. Nicolet, "Investigation of titanium—nitride layers for solar-cell contacts," in IEEE Transactions on Electron Devices, vol. 27, no. 4, pp. 873-876, Apr 1980. doi: 10.1109/T-ED.1980.19949
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79790
Deposited On:02 Aug 2017 23:39
Last Modified:15 Nov 2021 17:50

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