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AlGaAs heterostructure injection laser S.C.R.

Katz, J. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1980) AlGaAs heterostructure injection laser S.C.R. Electronics Letters, 16 (22). p. 840. ISSN 0013-5194. doi:10.1049/el:19800597. https://resolver.caltech.edu/CaltechAUTHORS:20170802-160938014

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Abstract

The operation of a gate-controlled p-n-p-n injection laser device has been demonstrated. The switching is accomplished by an electrical control signal. The threshold current of the laser incorporated into the device is about 100 mA, and its optical properties are similar to those of the Be-implanted laser reported recently.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/el:19800597DOIArticle
http://digital-library.theiet.org/content/journals/10.1049/el_19800597PublisherArticle
Additional Information:© 1980 The Institution of Electrical Engineers. 27th August 1980.
Subject Keywords:Lasers, Integrated optics
Issue or Number:22
DOI:10.1049/el:19800597
Record Number:CaltechAUTHORS:20170802-160938014
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170802-160938014
Official Citation:Katz, J.; Bar-chaim, N.; Margalit, S.; Yariv, A.: 'AlGaAs heterostructure injection laser s.c.r.', Electronics Letters, 1980, 16, (22), p. 840-842, DOI: 10.1049/el:19800597 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19800597
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79793
Collection:CaltechAUTHORS
Deposited By:INVALID USER
Deposited On:02 Aug 2017 23:37
Last Modified:05 Oct 2022 15:40

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