A Caltech Library Service

AlGaAs heterostructure injection laser S.C.R.

Katz, J. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1980) AlGaAs heterostructure injection laser S.C.R. Electronics Letters, 16 (22). p. 840. ISSN 0013-5194. doi:10.1049/el:19800597.

[img] PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


The operation of a gate-controlled p-n-p-n injection laser device has been demonstrated. The switching is accomplished by an electrical control signal. The threshold current of the laser incorporated into the device is about 100 mA, and its optical properties are similar to those of the Be-implanted laser reported recently.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1980 The Institution of Electrical Engineers. 27th August 1980.
Subject Keywords:Lasers, Integrated optics
Issue or Number:22
Record Number:CaltechAUTHORS:20170802-160938014
Persistent URL:
Official Citation:Katz, J.; Bar-chaim, N.; Margalit, S.; Yariv, A.: 'AlGaAs heterostructure injection laser s.c.r.', Electronics Letters, 1980, 16, (22), p. 840-842, DOI: 10.1049/el:19800597 IET Digital Library,
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79793
Deposited On:02 Aug 2017 23:37
Last Modified:05 Oct 2022 15:40

Repository Staff Only: item control page