Katz, J. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1980) AlGaAs heterostructure injection laser S.C.R. Electronics Letters, 16 (22). p. 840. ISSN 0013-5194. doi:10.1049/el:19800597. https://resolver.caltech.edu/CaltechAUTHORS:20170802-160938014
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Abstract
The operation of a gate-controlled p-n-p-n injection laser device has been demonstrated. The switching is accomplished by an electrical control signal. The threshold current of the laser incorporated into the device is about 100 mA, and its optical properties are similar to those of the Be-implanted laser reported recently.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1980 The Institution of Electrical Engineers. 27th August 1980. | |||||||||
| Subject Keywords: | Lasers, Integrated optics | |||||||||
| Issue or Number: | 22 | |||||||||
| DOI: | 10.1049/el:19800597 | |||||||||
| Record Number: | CaltechAUTHORS:20170802-160938014 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170802-160938014 | |||||||||
| Official Citation: | Katz, J.; Bar-chaim, N.; Margalit, S.; Yariv, A.: 'AlGaAs heterostructure injection laser s.c.r.', Electronics Letters, 1980, 16, (22), p. 840-842, DOI: 10.1049/el:19800597 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19800597 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 79793 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 02 Aug 2017 23:37 | |||||||||
| Last Modified: | 05 Oct 2022 15:40 |
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