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Silicon p-FETs from Ultrahigh Density Nanowire Arrays

Wang, Dunwei and Sheriff, Bonnie A. and Heath, James R. (2006) Silicon p-FETs from Ultrahigh Density Nanowire Arrays. Nano Letters, 6 (6). pp. 1096-1100. ISSN 1530-6984.

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Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10^(18) cm^(-3). Top-gated 4-μm-wide Si nanowire p-FETs yielded low off-currents (∼10^(-12) A), high on/off ratios (10^5−10^6), good on current values (30 μA/μm), high mobilities (∼100 cm^2/V−s), and low subthreshold swing values (∼80 mV/decade between 10^(-12) and 10^(-10) A increasing to 200 mV/decade between 10^(-10)−10^(-8) A).

Item Type:Article
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Heath, James R.0000-0001-5356-4385
Additional Information:© 2006 American Chemical Society. Received 28 December 2005. Published online 2 May 2006. Published in print 1 June 2006. We thank A. Boukai, Y. Bunimovich, and K. Kan for their help in device fabrication and J. Green and Dr. E. Johnston-Halperin for their discussions. This work is supported by the DARPA MoleApps Program, the MARCO Center for Advanced Materials and Devices, and NSF-CCF-05204490.
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Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:20170803-093630552
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Official Citation:Silicon p-FETs from Ultrahigh Density Nanowire Arrays Dunwei Wang, Bonnie A. Sheriff, and James R. Heath Nano Letters 2006 6 (6), 1096-1100 DOI: 10.1021/nl052558g
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79821
Deposited By: Ruth Sustaita
Deposited On:05 Aug 2017 21:15
Last Modified:03 Oct 2019 18:24

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