CaltechAUTHORS
  A Caltech Library Service

Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices

Roulet, M. E. and Schwob, P. and Golecki, I. and Nicolet, M.-A. (1979) Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices. Electronics Letters, 15 (17). pp. 527-529. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287

[img] PDF - Published Version
See Usage Policy.

492Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287

Abstract

The crystalline quality of s.o.s. layers can be improved near the silicon-sapphire interface by silicon implantation followed by recrystallisation. Device performance on such layers is markedly improved as to n-channel m.o.s.t. noise and leakage current, reverse diode current and lateral bipolar transistor gain. Minority-carrier lifetimes up to 50 ns are deduced.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/el:19790380DOIArticle
http://digital-library.theiet.org/content/journals/10.1049/el_19790380PublisherArticle
Additional Information:© 1979 The Institution of Electrical Engineers. 2nd July 1979. The authors would like to thank S. S. Lau for the r.e.d. measurements and D. Tonn for technical assistance (Caltech). Stimulating discussions with J. Fellrath of CEH are gratefully acknowledged. This work has been supported by the Office of Naval Research (L. Cooper) and by the Swiss Foundation for the Encouragement of Applied Research.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Swiss Foundation for the Encouragement of Applied ResearchUNSPECIFIED
Subject Keywords:Bipolar transistors, Metal-oxide-semiconductor field-effect transistors, semiconductor diodes, Semiconductor epitaxial layers
Record Number:CaltechAUTHORS:20170807-155031287
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287
Official Citation:Roulet, M.E.; Schwob, P.; Golecki, I.; Nicolet, M.-A.: 'Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices', Electronics Letters, 1979, 15, (17), p. 527-529, DOI: 10.1049/el:19790380 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/el_19790380
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:79875
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:07 Aug 2017 23:07
Last Modified:07 Aug 2017 23:07

Repository Staff Only: item control page