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Generation-recombination noise of junction-gate field-effect transistors

Boctor, Waguih J. and Prasad, Sheila (1974) Generation-recombination noise of junction-gate field-effect transistors. Proceedings of the Institution of Electrical Engineers, 121 (12). p. 1457. ISSN 00203270. https://resolver.caltech.edu/CaltechAUTHORS:20170809-144231919

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Abstract

The generation-recombination noise of junction-gate field-effect transistors is calculated taking into account the variable mobility. The field dependence of mobility suggested by Trofimenkoff is used, and the resultant spectral intensity of the drain-noise fluctuations shows no signs of a logarithmic singularity at saturation. The need for any cutoff procedure to remove the logarithmic singularity at saturation is therefore removed, and it is thus an improvement over earlier methods.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1049/piee.1974.0306DOIArticle
http://digital-library.theiet.org/content/journals/10.1049/piee.1974.0306PublisherArticle
Additional Information:© 1974 The Institution of Electrical Engineers. Paper 7303 E, first received 25th March and in revised form 28th, August 1974.
Subject Keywords:Field-effect transistors, Noise
Issue or Number:12
Record Number:CaltechAUTHORS:20170809-144231919
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170809-144231919
Official Citation:Boctor, Waguih J.; Prasad, Sheila: 'Generation-recombination noise of junction-gate field-effect transistors', Proceedings of the Institution of Electrical Engineers, 1974, 121, (12), p. 1457-1459, DOI: 10.1049/piee.1974.0306 IET Digital Library, http://digital-library.theiet.org/content/journals/10.1049/piee.1974.0306
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80031
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:09 Aug 2017 22:09
Last Modified:03 Oct 2019 18:26

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