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Final stage of the charge-transfer process in charge-coupled devices

Daimon, Yoshiaki and Mohsen, Amr M. and McGill, T. C. (1974) Final stage of the charge-transfer process in charge-coupled devices. IEEE Transactions on Electron Devices, 21 (4). pp. 266-272. ISSN 0018-9383. doi:10.1109/T-ED.1974.17908.

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The final stages of transfer of charge from under a storage gate is formulated analytically including both fringing-field induced drift and diffusion. Analytic solutions to these equations are presented for constant fringing fields, and a system of equations for spatially varying fields is developed. Approximate solutions for spatially varying fringing fields, when combined with a lumped-parameter model of the self-induced field effects, are shown to give a reasonably accurate representation of the free-charge transfer process.

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Additional Information:© 1974 IEEE. Manuscript received May 29, 1973. This work was supported in part by the Office of naval Research under Grant N00014-67-A-0094-0032 and the Naval Research Laboratories under Grant 00173-3-006252.
Issue or Number:4
Record Number:CaltechAUTHORS:20170809-145049065
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Official Citation:Y. Daimon, A. M. Mohsen and T. C. McGill, "Final stage of the charge-transfer process in charge-coupled devices," in IEEE Transactions on Electron Devices, vol. 21, no. 4, pp. 266-272, Apr 1974. doi: 10.1109/T-ED.1974.17908
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80032
Deposited On:09 Aug 2017 22:08
Last Modified:15 Nov 2021 17:52

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