Daimon, Yoshiaki and Mohsen, Amr M. and McGill, T. C. (1974) Final stage of the charge-transfer process in charge-coupled devices. IEEE Transactions on Electron Devices, 21 (4). pp. 266-272. ISSN 0018-9383. doi:10.1109/T-ED.1974.17908. https://resolver.caltech.edu/CaltechAUTHORS:20170809-145049065
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Abstract
The final stages of transfer of charge from under a storage gate is formulated analytically including both fringing-field induced drift and diffusion. Analytic solutions to these equations are presented for constant fringing fields, and a system of equations for spatially varying fields is developed. Approximate solutions for spatially varying fringing fields, when combined with a lumped-parameter model of the self-induced field effects, are shown to give a reasonably accurate representation of the free-charge transfer process.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1974 IEEE. Manuscript received May 29, 1973. This work was supported in part by the Office of naval Research under Grant N00014-67-A-0094-0032 and the Naval Research Laboratories under Grant 00173-3-006252. | |||||||||
| Issue or Number: | 4 | |||||||||
| DOI: | 10.1109/T-ED.1974.17908 | |||||||||
| Record Number: | CaltechAUTHORS:20170809-145049065 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170809-145049065 | |||||||||
| Official Citation: | Y. Daimon, A. M. Mohsen and T. C. McGill, "Final stage of the charge-transfer process in charge-coupled devices," in IEEE Transactions on Electron Devices, vol. 21, no. 4, pp. 266-272, Apr 1974. doi: 10.1109/T-ED.1974.17908 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 80032 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 09 Aug 2017 22:08 | |||||||||
| Last Modified: | 15 Nov 2021 17:52 |
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