Daimon, Yoshiaki and Mohsen, Amr M. and McGill, Thomas C. (1974) Charge transfer in buried-channel charge-coupled devices. In: 1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. IEEE , Piscataway, NJ, pp. 146-147. https://resolver.caltech.edu/CaltechAUTHORS:20170809-150823368
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Abstract
A detailed numerical simulation of the charge-transfer process in buried-channel CCDs will be presented. The limitations on the device performance due to incomplete free charge transfer, device parameters and clocking waveforms will be discussed.
Item Type: | Book Section | |||||||||
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Additional Information: | © 1974 IEEE. Supported in part by the Naval Research Laboratories under contract No. N00014-67-A-0094-0032. | |||||||||
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DOI: | 10.1109/ISSCC.1974.1155317 | |||||||||
Record Number: | CaltechAUTHORS:20170809-150823368 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20170809-150823368 | |||||||||
Official Citation: | Y. Daimon, A. Mohsen and T. McGill, "Charge transfer in buried-channel charge-coupled devices," 1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, Philadelphia, PA, USA, 1974, pp. 146-147. doi: 10.1109/ISSCC.1974.1155317 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 80035 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | INVALID USER | |||||||||
Deposited On: | 09 Aug 2017 22:31 | |||||||||
Last Modified: | 15 Nov 2021 17:52 |
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