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Charge transfer in buried-channel charge-coupled devices

Daimon, Yoshiaki and Mohsen, Amr M. and McGill, Thomas C. (1974) Charge transfer in buried-channel charge-coupled devices. In: 1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. IEEE , Piscataway, NJ, pp. 146-147. https://resolver.caltech.edu/CaltechAUTHORS:20170809-150823368

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Abstract

A detailed numerical simulation of the charge-transfer process in buried-channel CCDs will be presented. The limitations on the device performance due to incomplete free charge transfer, device parameters and clocking waveforms will be discussed.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/ISSCC.1974.1155317DOIArticle
http://ieeexplore.ieee.org/document/1155317/PublisherArticle
Additional Information:© 1974 IEEE. Supported in part by the Naval Research Laboratories under contract No. N00014-67-A-0094-0032.
Funders:
Funding AgencyGrant Number
Naval Research LaboratoryN00014-67-A-0094-0032
Record Number:CaltechAUTHORS:20170809-150823368
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170809-150823368
Official Citation:Y. Daimon, A. Mohsen and T. McGill, "Charge transfer in buried-channel charge-coupled devices," 1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, Philadelphia, PA, USA, 1974, pp. 146-147. doi: 10.1109/ISSCC.1974.1155317
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80035
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:09 Aug 2017 22:31
Last Modified:03 Oct 2019 18:27

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