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Direct growth of graphene on dielectric substrates: Epitaxy at incommensurate and reactive interfaces

Kelber, Jeffry and Jones, Jessica and Beauclair, Brock and Olanipekun, Opeyemi and Lightbourne, Sherard and Zhang, Mofei and Pollok, Brittany and Beatty, John and Driver, M. Sky and Cheng, Tao and Liu, Yuanyue and Goddard, William A., III (2016) Direct growth of graphene on dielectric substrates: Epitaxy at incommensurate and reactive interfaces. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE , Piscataway, NJ, pp. 470-473. ISBN 978-1-4673-9719-3. https://resolver.caltech.edu/CaltechAUTHORS:20170809-152211038

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Abstract

Direct growth of graphene by industrially scalable methods on suitable dielectric substrates is critical to the development of practical electronic and spintronic devices. Graphene growth by molecular beam epitaxy on the commensurate substrate h-BN(0001) and on other weakly interacting substrates has previously been demonstrated. We have been able to use MBE to grow graphene on incommensurate Co3O4(111), which we find involves formation of a deformed interfacial C layer due to some C atoms forming covalent bonds to oxide O sites, followed by epitaxial graphene growth in subsequent layers. These results suggest that similar graphene growth may be achievable on other p-type spinel-structured oxides, opening the door to new electronic or spintronic applications.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/ICSICT.2016.7998954DOIArticle
http://ieeexplore.ieee.org/document/7998954/PublisherArticle
ORCID:
AuthorORCID
Cheng, Tao0000-0003-4830-177X
Liu, Yuanyue0000-0002-5880-8649
Goddard, William A., III0000-0003-0097-5716
Additional Information:© 2016 IEEE. Peter Dowben is acknowledged for stimulating discussions. Work at UNT was supported in part by the NSF under grant no. ECCS-1508991, and in part by C­SPIN, a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA under task IDs 238l.001 and 238l.006. The research at Caltech was supported by the NSF (DMR-1436985) and DOE (DE-SC0014607).
Funders:
Funding AgencyGrant Number
NSFECCS-1508991
C­SPINUNSPECIFIED
STARnetUNSPECIFIED
Semiconductor Research CorporationUNSPECIFIED
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)2381.001
Defense Advanced Research Projects Agency (DARPA)2381.006
NSFDMR-1436985
Department of Energy (DOE)DE-SC0014607
Record Number:CaltechAUTHORS:20170809-152211038
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170809-152211038
Official Citation:J. Kelber et al., "Direct growth of graphene on dielectric substrates: Epitaxy at incommensurate and reactive interfaces," 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 2016, pp. 470-473. doi: 10.1109/ICSICT.2016.7998954
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80036
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:09 Aug 2017 22:30
Last Modified:27 Nov 2019 19:12

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