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Ion implantation in semiconductors

Mayer, J. W. (1973) Ion implantation in semiconductors. In: 1973 International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 3-5.

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Ion implantation is being applied extensively to silicon device technology. Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells and 2) distribution control in microwave and bipolar structures. Another feature that has not been extensively exploited is to combine the advantages of the high resolution capabilities of electric beam pattern delineation with the low lateral spread inherent in the implantation process. This talk reviews some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage and electron activity. Implantation processes in silicon are reasonably well understood. There remain areas which require further clarification. For compound semiconductors, particularly GaAs, implantation techniques offer attractive possibilities for the fabrication of high frequency devices. In these materials, the substrate temperature during implantation and the dielectric coating required to prevent dissociation during thermal anneal play major roles.

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Additional Information:© 1973 IEEE.
Record Number:CaltechAUTHORS:20170809-160158554
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Official Citation:J. W. Mayer, "Ion implantation in semiconductors," 1973 International Electron Devices Meeting, 1973, pp. 3-5. doi: 10.1109/IEDM.1973.188633
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80044
Deposited On:09 Aug 2017 23:07
Last Modified:15 Nov 2021 17:52

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