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An accurate numerical one-dimensional solutio of the P-N junction under arbitrary transient conditions

De Mari, Andrea (1967) An accurate numerical one-dimensional solutio of the P-N junction under arbitrary transient conditions. In: 1967 International Electron Devices Meeting. IEEE , Piscataway, NJ, p. 100.

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A numerical iterative method of solution of the one-dimensional basic two-carrier transport equations describing the behavior of semiconductor junctions under both steady-state and transient conditions is presented. The method is of a very general character: none of the conventional assumptions and restrictions are introduced and freedom is available in the choice of the doping profile, recombination-generation law, mobility dependencies, injection level, and boundary conditions applied solely at the external contacts. For a specified arbitrary input signal of either current or voltage as a function of time, the solution yields terminal properties and all the quantities of interest in the interior of the device (such as carrier densities, electric field, electrostatic potential, particle and displacement currents) as functions of both position and time.

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Additional Information:© 1967 IEEE.
Record Number:CaltechAUTHORS:20170814-164419326
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Official Citation:A. De Mari, "An accurate numerical one-dimensional solution of the P-N junction under arbitrary transient conditions," 1967 International Electron Devices Meeting, 1967, pp. 100-100. doi: 10.1109/IEDM.1967.187858
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80397
Deposited By: Kristin Buxton
Deposited On:15 Aug 2017 04:23
Last Modified:03 Oct 2019 18:30

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