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Measurement of the drift velocity of holes in silicon at high-field strengths

Rodriguez, V. and Ruegg, H. and Nicolet, M.-A. (1967) Measurement of the drift velocity of holes in silicon at high-field strengths. IEEE Transactions on Electron Devices, 14 (1). pp. 44-46. ISSN 0018-9383.

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A method is presented which allows the measurement of the velocity-field relationship of charge carriers in a semiconductor. The device used is a four-layer structure. The mode of operation is based on the injection by punch-through of charge carriers into a long depleted region. The velocity can be determined from the VI characteristic of the device and its geometry. Drift velocity saturation is indicated directly by the form of the characteristic. The method has been applied to the measurement of the high-field velocity of holes in silicon. Technological limitations restricted the measurements to fields above 4 · 10^4 V/cm. From this value up to 11 · 10^4 V/cm the hole velocity is found to be constant and equal to 7.5 · 10^6 cm/s ± 5%.

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Additional Information:© 1967 IEEE. Manuscript received October 27, 1966. The work reported was performed at Fairchild Semiconductor in the course of a summer employment of V. Rodriguez.
Issue or Number:1
Record Number:CaltechAUTHORS:20170814-171148315
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Official Citation:V. Rodriguez, H. Ruegg and M. A. Nicolet, "Measurement of the drift velocity of holes in silicon at high-field strengths," in IEEE Transactions on Electron Devices, vol. 14, no. 1, pp. 44-46, Jan 1967. doi: 10.1109/T-ED.1967.15894
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80401
Deposited By: Kristin Buxton
Deposited On:15 Aug 2017 04:20
Last Modified:03 Oct 2019 18:30

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