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Fast direct e-beam lithographic fabrication of first-order gratings for 1.3 μm DFB lasers

Gozdz, A. S. and Lin, P. S. D. and Scherer, A. and Lee, S. F. (1988) Fast direct e-beam lithographic fabrication of first-order gratings for 1.3 μm DFB lasers. Electronics Letters, 24 (2). pp. 123-125. ISSN 0013-5194.

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Phase-shifted first-order gratings for 1.3 μm distributed-feedback (DFB) lasers have been fabricated in InP by fast direct e-beam lithography. The two-layer resist system consisted of a highly sensitive (~3 μC/cm2) positive organosilicon e-beam resist, poly(3-butenyltrimethylsilane sulfone) (PBTMSS), and a bottom layer of diamond-like carbon (DLC). The high quality of these gratings was reflected in the excellent characteristics of the DFB lasers.

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Additional Information:© 1988 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. We thank J. Osinski for his contribution to wet etching of InP. Close collaboration with C. E. Zah, C. Caneau, S. Menocal and F. Favire is gratefully acknowledged, as are discussions with M. J. Bowden and T. P. Lee.
Subject Keywords:lasers and laser applications, semiconductor lasers, electron-beam lithography
Issue or Number:2
Record Number:CaltechAUTHORS:GOZel88
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:805
Deposited By: Tony Diaz
Deposited On:06 Oct 2005
Last Modified:02 Oct 2019 22:37

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